19 research outputs found

    Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

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    We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO₃/Nb-doped SrTiO₃ interface.This work was supported by the National Natural Science Foundation of China (Grant Nos. 11074193 and 51132001). Q.L. and Y.L. acknowledge the support of the Australian Research Council (ARC) in the form of ARC Discovery Grants

    Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped Substrate

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    Epitaxial NiO film was grown on 0.7% Nb-doped SrTiO3 substrates by pulsed laser deposition. The I-V characteristics of Ag/NiO/Nb-SrTiO3/In device show reproducible and pronounced bipolar resistive switching without forming process which was induced by the NiO/Nb-SrTiO3 junctions, and the resistive switching ratio HRS/LRS can reach 103 at the read voltage of −0.5 V. Furthermore, the resistance states can be controlled by changing the max forward voltage, reverse voltage, or compliance current, indicating multilevel memories. These results were discussed by considering the role of carrier injection trapped/detrapped at the interfacial depletion region of the heterojunction

    Design and Implement of Pyroelectric Energy Harvester Experimental Measurement System Based on STM32F103VET6

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    A design scheme of the pyroelectric energy harvesting and conversion experimental measurement system was proposed. It can be used to evaluate the harvesting and conversion properties of pyroelectric energy harvester. The STM32F103VET6 microcontroller is used as control core, and the variation temperature filed can be generated by using semiconductor chilling plate, which is controlled by Fuzzy-PID temperature module, to achieve the temperature rapid heating or cooling. In system, using DS18B20 to achieve the temperature real-time data acquisition, using TF TLCD 2.8 LCD to set the initial parameters and display the related real-time parameters. The measurement principle, system hardware and software architecture of experiment measurement system are specially described in article. Simultaneously, the energy conversion and harvesting properties of novel pyroelectric energy harvester, which is prepared by Pb[(MnxNb1-x)1/2(MnxSb1-x)1/2]y(ZrzTi1-z)1-yO3 (PMnN-PMS-PZT) ceramics, is discussed. The experiment results show that it can quickly realize the system temperature heating or cooling, and also can satisfy the experiment needs of the properties of pyroelectric energy harvesting and conversion characteristics measurement

    A device with two kinds of functions —Ultraviolet photodetector and electroluminescence: Fabrication and carrier transport mechanism

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    We reported an n-ZnO/n-GaN heterojunction device in which both ultraviolet (UV) detecting and electroluminescence performances of the device are controlled by the applied forward-bias voltage. For ZnO-based UV photodetectors, our devices showed excellent photoresponse characteristics with detectivity of ∼2.80×1013 cm Hz1/2/W and responsivity of ∼276 A/W at 2 V. UV and visible electroluminescences of the device were also observed. Also, a Mn:ZnO/GaN heterojunction had been prepared and it also possessed the two functions. Furthermore, the Mn:ZnO/GaN device showed better UV detectivity and enlarged the visible emission. The reason for our devices possessing two functions had been explored through the carrier transport mechanism and the channel current formation diagram
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