On the momentum-dependence of K−K^{-}-nuclear potentials

The momentum dependent $K^{-}$-nucleus optical potentials are obtained based on the relativistic mean-field theory. By considering the quarks coordinates of $K^-$ meson, we introduced a momentum-dependent "form factor" to modify the coupling vertexes. The parameters in the form factors are determined by fitting the experimental $K^{-}$-nucleus scattering data. It is found that the real part of the optical potentials decrease with increasing $K^-$ momenta, however the imaginary potentials increase at first with increasing momenta up to $P_k=450\sim 550$ MeV and then decrease. By comparing the calculated $K^-$ mean free paths with those from $K^-n$/$K^-p$ scattering data, we suggested that the real potential depth is $V_0\sim 80$ MeV, and the imaginary potential parameter is $W_0\sim 65$ MeV.Comment: 9 pages, 4 figure

Approximation for discrete Fourier transform and application in study of three-dimensional interacting electron gas

The discrete Fourier transform is approximated by summing over part of the terms with corresponding weights. The approximation reduces significantly the requirement for computer memory storage and enhances the numerical computation efficiency with several orders without loosing accuracy. As an example, we apply the algorithm to study the three-dimensional interacting electron gas under the renormalized-ring-diagram approximation where the Green's function needs to be self-consistently solved. We present the results for the chemical potential, compressibility, free energy, entropy, and specific heat of the system. The ground-state energy obtained by the present calculation is compared with the existing results of Monte Carlo simulation and random-phase approximation.Comment: 11 pages, 13 figure

Electric Transport Theory of Dirac Fermions in Graphene

Using the self-consistent Born approximation to the Dirac fermions under finite-range impurity scatterings, we show that the current-current correlation function is determined by four-coupled integral equations. This is very different from the case for impurities with short-range potentials. As a test of the present approach, we calculate the electric conductivity in graphene for charged impurities with screened Coulomb potentials. The obtained conductivity at zero temperature varies linearly with the carrier concentration, and the minimum conductivity at zero doping is larger than the existing theoretical predictions, but still smaller than that of the experimental measurement. The overall behavior of the conductivity obtained by the present calculation at room temperature is similar to that at zero temperature except the minimum conductivity is slightly larger.Comment: 6 pages, 3 figure

Exploring the quantum critical behaviour in a driven Tavis-Cummings circuit

Quantum phase transitions play an important role in many-body systems and have been a research focus in conventional condensed matter physics over the past few decades. Artificial atoms, such as superconducting qubits that can be individually manipulated, provide a new paradigm of realising and exploring quantum phase transitions by engineering an on-chip quantum simulator. Here we demonstrate experimentally the quantum critical behaviour in a highly-controllable superconducting circuit, consisting of four qubits coupled to a common resonator mode. By off-resonantly driving the system to renormalise the critical spin-field coupling strength, we have observed a four-qubit non-equilibrium quantum phase transition in a dynamical manner, i.e., we sweep the critical coupling strength over time and monitor the four-qubit scaled moments for a signature of a structural change of the system's eigenstates. Our observation of the non-equilibrium quantum phase transition, which is in good agreement with the driven Tavis-Cummings theory under decoherence, offers new experimental approaches towards exploring quantum phase transition related science, such as scaling behaviours, parity breaking and long-range quantum correlations.Comment: Main text with 3 figure

First-principles study of native point defects in Bi2Se3

Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor, and Bi vacancy is a triple acceptor. Se antisite (Se$_{Bi}$) is always an active donor in the system because its donor level ($\varepsilon$(+1/0)) enters into the conduction band. Interestingly, Bi antisite(Bi$_{Se1}$) in Bi$_2$Se$_3$ is an amphoteric dopant, acting as a donor when $\mu$$_e$$<$0.119eV (the material is typical p-type) and as an acceptor when $\mu$$_e$$>$0.251eV (the material is typical n-type). The formation energies under different growth environments (such as Bi-rich or Se-rich) indicate that under Se-rich condition, Se$_{Bi}$ is the most stable native defect independent of electron chemical potential $\mu$$_e$. Under Bi-rich condition, Se vacancy is the most stable native defect except for under the growth window as $\mu$$_e$$>$0.262eV (the material is typical n-type) and $\Delta$$\mu$$_{Se}$$<$-0.459eV(Bi-rich), under such growth windows one negative charged Bi$_{Se1}$ is the most stable one.Comment: 7 pages, 4 figure