Effect of preparation conditions on physic-chemical properties of tin-doped nanocrystalline indium oxide

In this paper the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and hydrochloric solutions and also, for comparison melts of salts nitrates by an alkaline reactant (NH4OH) are considered.The performed investigation allowed to set the optimal condition of preparation of polycrystalline tin-doped indium oxide with maximal electron concentration

Hydrogen sensors based on In2O3 thin films with bimetallic Pt/Pd catalysts on the surface and tin and dysprosium impuri-ties in the bulk

This paper presents the results of studying the characteristics of hydrogen sensors based on thin In2O3 films modified with tin and dysprosium with dispersed double Pt/Pd catalysts deposited on the surface. To control the content of Sn and Dy in the films, an original technology was developed, and ceramic targets were fabricated from powders of the In–Dy–O, Dy–Sn–O, and In–Dy–Sn–O systems synthesized by the sol–gel method. Films of complex composition were obtained by RF magnetron sputtering of the corresponding targets. Structural features of the obtained thin films were studied by Raman spectroscopy. It is shown that various combinations of tin and dysprosium concentrations, as well as the presence of Pt/Pd catalysts on the surface, have a significant effect on the defectiveness of the films and the density of oxygen adsorption centers. As a result, the resistance of sensors in pure air (R0), the activation energies of the temperature dependences of R0, the bending of the energy bands at the grain boundaries of the semiconductor, and the responses to the action of hydrogen in the concentration range of 20–25,000 ppm change. A unique feature of Pt/Pd/ In2O3: Sn (0.5 at%), Dy (4.95 at%) films is their high sensitivity at 20–100 ppm and the absence of signal saturation in the region of high hydrogen concentrations of 5000–25,000 ppm, allowing them to be used to detect H2 in a wide range of concentrations

Properties of polydisperse tin-doped dysprosium and indium oxides

The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties

Synthesis of nanopowders by the glycine-nitrate method in the In-Dy-O system

We investigated the feasibility of synthesizing nanopowders containing indium and dysprosium oxides by the glycine-nitrate method. It was found that the glycine-nitrate method significantly reduces the content of the indium component in the resulting mixture of indium and dysprosium oxides. In this case, intensive absorption of carbon dioxide from the air by the formed particles induces formation of amorphous carbonaceous compounds, which decompose only under high-temperature treatment (900 °C). This prevents compaction of powders synthesized by the glycine-nitrate method. Comparison of the characteristics of powders containing indium oxides and dysprosium, synthesized by the glycine-nitrate method and by the method of co-precipitation of indium and dysprosium hydroxides from chloride solutions, showed the advantage of the co-precipitation method in the pressing of powders

Effect of preparation conditions on physic-chemical properties of tin-doped nanocrystalline indium oxide

In this paper the results of investigation of phase formation and change of concentration of free electrons (Ne) in indium tin oxide system during heat treatment of coprecipitated hydroxides of indium and tin from nitric and hydrochloric solutions and also, for comparison melts of salts nitrates by an alkaline reactant (NH4OH) are considered.The performed investigation allowed to set the optimal condition of preparation of polycrystalline tin-doped indium oxide with maximal electron concentration

Properties of polydisperse tin-doped dysprosium and indium oxides

The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties