Raman Scattering Measurements and Analyses of GaN Thin Films Grown on ZnO Substrates by Metalorganic Chemical Vapor Deposition

Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples\u27 spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 (low) and E2 (high) of ZnO. Gaussian fitting of the peaks is used to analyze the spectra data through Origin and Matlab software. The data confirms characteristic peaks for GaN and ZnO that agree with previous spectra of other GZ thin films. Many RS measurements were performed to confirm the crystalline quality of the sample for future characteristic testing

Experimental Demonstration of Inequivalent Mutually Unbiased Bases

Quantum measurements based on mutually unbiased bases (MUB) play crucial roles in foundational studies and quantum information processing. It is known that there exist inequivalent MUB, but little is known about their operational distinctions, not to say experimental demonstration. In this work, by virtue of a simple estimation problem we experimentally demonstrate the operational distinctions between inequivalent triples of MUB in dimension 4 based on high-precision photonic systems. The experimental estimation fidelities coincide well with the theoretical predictions with only 0.16$\%$ average deviation, which is 25 times less than the difference (4.1$\%$) between the maximum estimation fidelity and the minimum estimation fidelity. Our experiments clearly demonstrate that inequivalent MUB have different information extraction capabilities and different merits for quantum information processing

Room temperature deposition of Al-doped ZnO films on quartz substrates by radio-frequency magnetron sputtering and effects of thermal annealing

High-quality Al-doped zinc oxide (AZO) thin films have been deposited on quartz substrates by radio-frequency magnetron sputtering at room temperature for thin film solar cell applications as transparent conductive oxide (TCO) electrode layers. Effects of post-deposition annealing treatment in pure nitrogen and nitrogen/hydrogen atmosphere have been investigated. Annealing treatments were carried out from 300 degrees C to 600 degrees C for compatibility with typical optoelectronic device fabrication processes. A series of characterization techniques, including X-ray diffraction, scanning electron microscopy, Hall, optical transmission, and X-ray photoelectron spectroscopy has been employed to study these AZO materials. It was found that there were significant changes in crystallinity of the films, resistivity increased from 4.60 x 10(-4) to 4.66 x 10(-3) Omega cm and carrier concentration decreased from 8.68 x 10(20) to 2.77 x 10(20) cm(-3) when annealing in 400 degrees C pure nitrogen. Whereas there were no significant changes in electrical and optical properties of the AZO films when annealing in 300-500 degrees C nitrogen/ hydrogen atmosphere, the electrical stability of the AZO films during the hydrogen treatment is attributed to both desorption of adsorbed oxygen from the grain boundaries and production of additional oxygen vacancies that act as donor centers in the films by removal of oxygen from the ZnO matrix. These results demonstrated that the AZO films are stably suited for TCO electrodes in display devices and solar cells. (C) 2010 Elsevier B.V. All rights reserved

Measuring a dynamical topological order parameter in quantum walks

Quantum processes of inherent dynamical nature, such as quantum walks, defy a description in terms of an equilibrium statistical physics ensemble. Until now, identifying the general principles behind the underlying unitary quantum dynamics has remained a key challenge. Here, we show and experimentally observe that split-step quantum walks admit a characterization in terms of a dynamical topological order parameter (DTOP). This integer-quantized DTOP measures, at a given time, the winding of the geometric phase accumulated by the wavefunction during a quantum walk. We observe distinct dynamical regimes in our experimentally realized quantum walks, and each regime can be attributed to a qualitatively different temporal behavior of the DTOP. Upon identifying an equivalent many-body problem, we reveal an intriguing connection between the nonanalytic changes of the DTOP in quantum walks and the occurrence of dynamical quantum phase transitions. Taking stock of a quantum walk A model describing the random walks of quantum particles has been developed by researchers in China and Germany. Classical phenomena such as molecules moving in gases or animals foraging for food can be described by random walks, where every step is chosen through processes like tossing a coin. For quantum particles, randomness arises from the transitions and entanglement of quantum states, but it is difficult to describe the emerging statistical patterns in these quantum walks. Chuan-Feng Li at the University of Science and Technology of China, Hefei, and co-workers used an experimental setup for observing the quantum walks of single photons. They found that the walks could be characterized by a so-called dynamical topological order parameter that describes the behavior of the particle's wavefunction during the walk, thereby linking quantum effects to physical spatial measurements

Monte-Carlo simulations of the recombination dynamics in porous silicon

A simple lattice model describing the recombination dynamics in visible light emitting porous Silicon is presented. In the model, each occupied lattice site represents a Si crystal of nanometer size. The disordered structure of porous Silicon is modeled by modified random percolation networks in two and three dimensions. Both correlated (excitons) and uncorrelated electron-hole pairs have been studied. Radiative and non-radiative processes as well as hopping between nearest neighbor occupied sites are taken into account. By means of extensive Monte-Carlo simulations, we show that the recombination dynamics in porous Silicon is due to a dispersive diffusion of excitons in a disordered arrangement of interconnected Si quantum dots. The simulated luminescence decay for the excitons shows a stretched exponential lineshape while for uncorrelated electron-hole pairs a power law decay is suggested. Our results successfully account for the recombination dynamics recently observed in the experiments. The present model is a prototype for a larger class of models describing diffusion of particles in a complex disordered system.Comment: 33 pages, RevTeX, 19 figures available on request to [email protected]