Top quark forward-backward asymmetry at the Tevatron: a comparative study in different new physics models

The top quark forward-backward asymmetry A_{FB}^t measured at the Tevatron is above the Standard Model prediction by more than 2-sigma deviation, which might be a harbinger for new physics. In this work we examine the contribution to A_{FB}^t in two different new physics models: one is the minimal supersymmetric model without R-parity (RPV-MSSM) which contributes to A_{FB}^t via sparticle-mediated t-channel process d d_bar-> t t_bar; the other is the third-generation enhanced left-right model (LR model) which contributes to A_{FB}^t via Z'-mediated t-channel or s-channel processes. We find that in the parameter space allowed by the tt_bar production rate and the tt_bar invariant mass distribution at the Tevatron, the LR model can enhance A_{FB}^t to within the 2-sigma region of the Tevatron data for the major part of the parameter space, and in optimal case A_{FB}^t can reach 12% which is slightly below the 1-sigma lower bound. For the RPV-MSSM, only in a narrow part of the parameter space can the \lambda'' couplings enhance A_{FB}^t to within the 2-sigma region while the \lambda' couplings just produce negative contributions to worsen the fit.Comment: Version in PRD (RPV-MSSM lambda" effects added

In-situ micro bend testing of SiC and the effects of Ga+ ion damage

The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation

Formation and homogenisation of Sn-Cu interconnects by self-propagated exothermic reactive bonding

We produced SnCu interconnects by self-propagated exothermic reactions using AlNi NanoFoil at ambient conditions, through the instantaneous localised heat across the interfaces between Sn electroplated Cu substrates. This technique presents a great potential for electronics integration with minimal thermal effects to the components. However, the metastable phases resulted from the non-equilibrium interfacial reactions and solidification were inevitable under a highly transient regime due to a drastic heating/cooling (over 107 K/s). In this study, Finite Element Analysis was performed to predict the temperature profiles across bonding interfaces, which were subsequently correlated with the formation and homogenisation of the bonded structures during the bonding and post-bonding ageing process. It has been revealed that, for nano-sized metastable phases, their formation, morphologies and distribution were primarily attributed to the convective mass transportation, liquid-solid inter-diffusion, and directional non-equilibrium solidification of Sn in molten zone of the bonding interfaces. The non-equilibrium phases initially formed in the SnCu interconnects can be homogenised towards the equilibrium status by accelerated ageing. This was achieved through the coalescing and subsequent growth of the original nano-sized metastable phases, as a result of the solid-diffusion of Cu and Ag atoms at intergranular boundary regions of Sn grains, AlNi NanoFoil/Sn. and Cu/Sn interfaces