Dual Characters of GH-IGF1 Signaling Pathways in Radiotherapy and Post-radiotherapy Repair of Cancers

Radiotherapy remains one of the most important cancer treatment modalities. In the course of radiotherapy for tumor treatment, the incidental irradiation of adjacent tissues could not be completely avoided. DNA damage is one of the main factors of cell death caused by ionizing radiation, including single-strand (SSBs) and double-strand breaks (DSBs). The growth hormone-Insulin-like growth factor 1 (GH-IGF1) axis plays numerous roles in various systems by promoting cell proliferation and inhibiting apoptosis, supporting its effects in inducing the development of multiple cancers. Meanwhile, the GH-IGF1 signaling involved in DNA damage response (DDR) and DNA damage repair determines the radio-resistance of cancer cells subjected to radiotherapy and repair of adjacent tissues damaged by radiotherapy. In the present review, we firstly summarized the studies on GH-IGF1 signaling in the development of cancers. Then we discussed the adverse effect of GH-IGF1 signaling in radiotherapy to cancer cells and the favorable impact of GH-IGF1 signaling on radiation damage repair to adjacent tissues after irradiation. This review further summarized recent advances on research into the molecular mechanism of GH-IGF1 signaling pathway in these effects, expecting to specify the dual characters of GH-IGF1 signaling pathways in radiotherapy and post-radiotherapy repair of cancers, subsequently providing theoretical basis of their roles in increasing radiation sensitivity during cancer radiotherapy and repairing damage after radiotherapy

Bioelectric Interface Technologies in Cells and Organoids

Abstract The past two decades have witnessed breakthroughs in cellular‐scale bioelectronics and their widespread applications in life sciences, creating many powerful platforms for studying organisms directly and efficiently. These advanced devices can integrate seamlessly and intimately onto/into target cells and organoids, providing unprecedented functions and revolutionary capabilities. Bioelectronics with nanostructured designs are developed to allow for long‐term, stable monitoring of electrophysiological activities. This review summarizes nanostructured bioelectronics for cell electrophysiology recording, emphasizing the crucial roles of structural designs on functions and capabilities, e.g., intracellular access, high‐density multiplexed recording, multifunctional interfaces and the conformability to curvy biological shapes. Finally, the remaining challenges and opportunities in nanostructured bioelectronics are identified, and perspectives on the future developments toward their practical applications are provided

Recent Advances in Multifunctional Wearable Sensors and Systems: Design, Fabrication, and Applications

Multifunctional wearable sensors and systems are of growing interest over the past decades because of real-time health monitoring and disease diagnosis capability. Owing to the tremendous efforts of scientists, wearable sensors and systems with attractive advantages such as flexibility, comfort, and long-term stability have been developed, which are widely used in temperature monitoring, pulse wave detection, gait pattern analysis, etc. Due to the complexity of human physiological signals, it is necessary to measure multiple physiological information simultaneously to evaluate human health comprehensively. This review summarizes the recent advances in multifunctional wearable sensors, including single sensors with various functions, planar integrated sensors, three-dimensional assembled sensors, and stacked integrated sensors. The design strategy, manufacturing method, and potential application of each type of sensor are discussed. Finally, we offer an outlook on future developments and provide perspectives on the remaining challenges and opportunities of wearable multifunctional sensing technology

Effect of Pt on Stress Rupture Properties of Pt-Modified Nickel Aluminide Coatings at 1100 °C

Platinum plays a crucial role in the superior high-temperature oxidation resistance of Pt-modified nickel aluminide (PtAl) coatings. However, PtAl coatings usually serve in thermo-mechanical coupling environments. To investigate whether Pt contributes to the high-temperature mechanical properties of PtAl coating, stress rupture tests under 1100 °C/100 MPa were performed on PtAl coatings with varying Pt contents. The different coatings were obtained by changing the thickness of the electroplated Pt layer, followed by a diffusion heat treatment and the aluminizing process in the present work. The results of the stress rupture tests indicated that an increasing Pt content resulted in a significant decrease in the stress rupture life of PtAl-coated superalloys under 1100 °C/100 MPa. Theoretical calculations and microstructural analysis suggested that an increased coating thickness due to the Pt content is not the main reason for this decline. It was found that the cracks generated close to the substrate in high-Pt-coated superalloys accelerated the fracture failure

Design strategy of porous elastomer substrate and encapsulation for inorganic stretchable electronics

The emergence of stretchable electronic technology has led to the development of many industries and facilitated many unprecedented applications, owing to its ability to bear various deformations. However, conventional solid elastomer substrates and encapsulation can severely restrict the free motion and deformation of patterned interconnects, leading to potential mechanical failures and electrical breakdowns. To address this issue, we propose a design strategy of porous elastomer substrate and encapsulation to improve the stretchability of serpentine interconnects in island-bridge structures. The serpentine interconnects are fully bonded to the elastomer substrate, while segments above circular pores remain suspended, allowing for free deformation and a substantial improvement in elastic stretchability compared to the solid substrates. The pores ensure unimpeded interconnect deformations, and moderate porosity provides support while maintaining the initial planar state. Compared to conventional solid configurations, finite element analysis (FEA) demonstrates a substantial enhancement of elastic stretchability (e.g. ≈9 times without encapsulation and ≈ 7 times with encapsulation). Uniaxial cyclic loading fatigue experiments validate the enhanced elastic stretchability, indicating the mechanical stability of the porous design. With its intrinsic advantages in permeability, the proposed strategy has the potential to offer insightful inspiration and novel concepts for advancing the field of stretchable inorganic electronics

Label-free quantitative proteomics analysis of Humulus scandens (Lour.) Merr. leaves treated by an odor compound of Periploca sepium Bunge

The odor compound from Periploca sepium Bunge, 2-hydroxy-4-methoxy-benzaldehyde (HMB), is an allelochemical agent and is one of the least investigated isomers of vanillin. In this study, we used label-free quantitative proteomics analysis technology to investigate the effect of HMB on the protein expression of Humulus scandens (Lour.) Merr. leaves in July 2019 on Guiyang. A total of 269 proteins of 624 identified proteins were differentially expressed, among which 21.18% of the proteins were up-regulated and 32.71% down-regulated. These proteins were classified into 11 cell components and more than 20% of differentially expressed proteins were located in cell membrane and chloroplast. Functional classification analysis showed that 12 molecular functions were altered upon HMB treatment, and the ratio of catalytic activity was the highest (19.53%). At least 12 biological functions were affected, which involved small molecule metabolic processes, organic substance metabolic processes, gene expression, and photosynthesis. Our data provide resources and insights into the biochemical mechanism by which HMB kills weeds

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

International audienceUnderstanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This work reports the atomic-scale distributions of phosphorus and boron dopants in Si nanocrystals mul- tilayers. The phosphorus-doped and boron-doped Si nanocrystals/SiO2 multilayers are fabricated by PECVD and subsequently annealed at 1000 ◦C. It is found that the locations of phosphorus are redistributed after the formation of Si nanocrystals due to the combined effects of formation energy and self-purification. Phosphorus dopants are mainly distributed at the Si nanocrystals surfaces to passivate the dangling bonds, while part of them incorporate into Si nanocrystals lattice sites to provide free electrons. However, boron dopants exhibit different distributions in contrast to phosphorus. The concentration of boron on Si nanocrystals surfaces can reach as high as 40.0 at. %, which forms a dopant-shell covering on Si nanocrystals. Meanwhile, the boron dopant-shell can modify the surface states of Si nano- crystals like Si-oxide related emission centers and dangling bonds, which is responsible for the luminescence properties. Moreover, the boron-aggregations with concentration near 74.8 at. % are appeared inside Si nanocrystals and led to the damage of crystalline lattice

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

International audienceUnderstanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This work reports the atomic-scale distributions of phosphorus and boron dopants in Si nanocrystals mul- tilayers. The phosphorus-doped and boron-doped Si nanocrystals/SiO2 multilayers are fabricated by PECVD and subsequently annealed at 1000 ◦C. It is found that the locations of phosphorus are redistributed after the formation of Si nanocrystals due to the combined effects of formation energy and self-purification. Phosphorus dopants are mainly distributed at the Si nanocrystals surfaces to passivate the dangling bonds, while part of them incorporate into Si nanocrystals lattice sites to provide free electrons. However, boron dopants exhibit different distributions in contrast to phosphorus. The concentration of boron on Si nanocrystals surfaces can reach as high as 40.0 at. %, which forms a dopant-shell covering on Si nanocrystals. Meanwhile, the boron dopant-shell can modify the surface states of Si nano- crystals like Si-oxide related emission centers and dangling bonds, which is responsible for the luminescence properties. Moreover, the boron-aggregations with concentration near 74.8 at. % are appeared inside Si nanocrystals and led to the damage of crystalline lattice