Thermoelectric signals of state transition in polycrystalline SmB6

Topological Kondo insulator SmB6 has attracted quite a lot of attentions from condensed matter physics community. A number of unique electronic properties, including low- temperature resistivity anomaly, 1D electronic transport and 2D Fermi surfaces have been observed in SmB6. Here, we report on thermoelectric transport properties of polycrystalline SmB6 over a broad temperature from 300 K to 2 K. An anomalous transition in the temperature-dependent Seebeck coefficient S from S(T) ~ T-1 to S(T) ~ T was observed around 12 K. Such a transition demonstrates a transition of conductivity from 3D metallic bulk states to 2D metallic surface states with insulating bulk states. Our results suggest that the thermotransport measurements could be used for the characterization of state transition in topological insulators.Comment: 9 pages, 3 figures, Journal of Physics: Condensed Matter 201

Spin gapless semiconductors

Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have a fully spin polarised electrons and holes. They bridge zero gap materials and half-metals. The band structures of the SGSs can have two types of energy dispersions: Dirac linear dispersion and parabolic dispersion. The Dirac type SGSs exhibit fully spin polarized Dirac cones, and offer a platform for massless and fully spin polarized spintronics as well as dissipationless edge state via quantum anomalous Hall effect. Due to its fascinating spin and charge states, they hold great potential application in spintronics. There have been tremendous efforts worldwide on searching for suitable candidates of SGSs. In particularly, there is an increasing interest in searching for Dirac type SGSs. In the past decade, a large number of Dirac or parabolic type SGSs have been predicted by density functional theory and some of parabolic SGSs have been experimentally demonstrated. The SGSs hold great potential for high speed and low-energy consumption spintronics, electronics and optoelectronics. Here, we review both Dirac and parabolic types of SGSs in different materials systems and outline the concepts of SGSs, novel spin and charge states, and potential applications of SGSs in next generation spintronic devices.Comment: Small in press. Submitted on September 10, 2019, Accepted on May 6, 202

Intrinsically core-shell plasmonic dielectric nanostructures with ultrahigh refractive index

Topological insulators are a new class of quantum material s with metallic (edge) surface states and insulating bulk states. They demonstrate a variety of novel electronic and optical properties, which make them highly promising electronic, spintronic, and optoelectronic materials. We report on a novel conic plasmonic nanostructure that is made of bulk-insulating topological insulators and has an intrinsic core-shell formation. The insulating (dielectric) core of the nanocone displays an ultrahigh refractive index of up to 5.5 in the near-infrared frequency range. On the metallic shell, plasmonic response and strong backward light scattering were observed in the visible frequency range. Through in- tegrating the nanocone arrays into a-Si thin film solar cel ls, up to 15% enhancement of light absorption was predicted in the ultraviolet and visible ranges. With these unique features, the intrinsically core-shell plasmonic nanostructure paves a new way for designing low-loss and high-performance visible to infrared optical devices

Modulation of crystal and electronic structures in topological insulators by rare-earth doping

We study magnetotransport in a rare earth doped topological insulator, Sm0.1Sb1.9Te3 single crystals, under magnetic fields up to 14 T. It is found that that the crystals exhibit Shubnikov de Haas oscillations in their magneto-transport behaviour at low temperatures and high magnetic fields. The SdH oscillations result from the mixed contributions of bulk and surface states. We also investigate the SdH oscillations in different orientations of the magnetic field, which reveals a three dimensional Fermi surface topology. By fitting the oscillatory resistance with the Lifshitz Kosevich theory, we draw a Landau-level fan diagram that displays the expected nontrivial phase. In addition, the density functional theory calculations shows that Sm doping changes the crystal structure and electronic structure compared with pure Sb2Te3. This work demonstrates that rare earth doping is an effective way to manipulate the Fermi surface of topological insulators. Our results hold potential for the realization of exotic topological effects in magnetic topological insulators.Comment: 16 pages, 5 figure

Quantum oscillations of robust topological surface states up to 50 K in thick bulk-insulating topological insulator

As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3-300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K

Giant interlayer magnetoresistances and strong anisotropy in p-type Sb2Te3 single crystals

Anisotropic interlayer magneto-transport properties have been studied over a broad range of temperatures and magnetic fields in p-type Sb2Te3 single crystals. Giant interlayer magnetoresistance (MR) of up to 400% was observed, which exhibits quadratic field dependences in low fields and becomes linear at high fields without any trend towards saturation. The interlayer MR displays strong anisotropy and is attributable to the anisotropy of the Fermi surface. The observed giant anisotropic interlayer MR could find applications in p-type Sb2Te3 based magneto-electronic devices

Quantum oscillations in iron-doped single crystals of the topological insulator S b2 T e3

We investigated the magnetotransport properties of Fe-doped topological insulator Sb1.96Fe0.04Te3 single crystals. With doping, the band structure changes significantly and multiple Fermi pockets become evident in the Shubnikov-de Haas oscillations, in contrast to the single frequency detected for pure Sb2Te3. Using complementary density functional theory calculations, we identify an additional bulk hole pocket introduced at the Γ point which originates from the chemical distortion associated with the Fe dopant. Experimentally, both doped and undoped samples are hole-carrier dominated; however, Fe doping also reduces the carrier density and mobility. The angle dependent quantum oscillations of Sb1.96Fe0.04Te3 were analyzed to characterize the complex Fermi surface and isolate the dimensionality of each SdH feature. Among those components, we found two oscillations frequencies, which related to two Fermi pockets are highly angle dependent. Moreover, the fermiology changes via Fe doping and may also provide a different Berry phase, as demonstrated by the Landau fan diagram, thus indicating a rich complexity in the underlying electronic structure