12 research outputs found
Record Endurance for Single-Walled Carbon Nanotube–Based Memory Cell
Get PDFWe study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10−6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum
Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects
No full textHigh-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric
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Scalable and Surfactant-Free Process for Single-Walled Carbon Nanotube Based Transparent Conductive Thin Films via Layer-by-Layer Assembly
No full textHigh-Quality, Highly Concentrated Semiconducting Single-Wall Carbon Nanotubes for Use in Field Effect Transistors and Biosensors
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