Self-organization in porous 6H–SiC

Pores in porous 6H–SiC were found to propagate first nearly parallel with the basal plane and gradually change direction and align with the c axis. As a consequence, well-defined columnar pores were formed. It was shown that the rate of change of propagation directions was influenced by the etching parameters, such as hydrofluoric acid concentration and current density. Larger currents resulted in formation of larger pores. Pore sizes were found to increase with depth due to a decrease of the acid concentration. In addition, due to chemical etching effects, larger pore sizes were obtained close to the sample surface

Self-organization in porous 6H–SiC

Pores in porous 6H–SiC were found to propagate first nearly parallel with the basal plane and gradually change direction and align with the c axis. As a consequence, well-defined columnar pores were formed. It was shown that the rate of change of propagation directions was influenced by the etching parameters, such as hydrofluoric acid concentration and current density. Larger currents resulted in formation of larger pores. Pore sizes were found to increase with depth due to a decrease of the acid concentration. In addition, due to chemical etching effects, larger pore sizes were obtained close to the sample surface

Infrared response of multiple-component free-carrier plasma in heavily doped \u3ci\u3ep\u3c/i\u3e-type GaAs

Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm-1. Due to partial filling of the heavy- and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs

Infrared optical properties of aged porous GaAs

Aging properties of porous GaAs were investigated nondestructively using variable angle of incidence infrared spectroscopic ellipsometry. In addition to the thickness and volume porosity, properties of the solid part of the porous material are investigated in terms of the long-wavelength dielectric function and chemical composition. The high sensitivity is employed to detect and identify infrared resonant absorptions related to different vibration modes of cubic and amorphous As2O3. Resonances centered at 333.3, 480, 785.8, 838, and 1045.5 cm-1 are from cubic As2O3, whereas resonances centered at 350, 490, and 808.5 cm-1 are from amorphous As2O3