Influence of Langmuir circulations on turbulence in the bottom boundary layer of shallow water

Langmuir circulations (LCs) generated by the interaction between wind-driven currents and surface waves can engulf the whole water column in neutrally stratified shallow water and interact with the turbulence in the bottom boundary layer. In this study, we perform a mechanistic study using wall-resolved large-eddy simulations (LES) based on the Craik-Leibovich equations to investigate the effects of LCs on turbulence statistics in the bottom half of shallow water. The highest. Reynolds number considered in this paper, Re-tau = 1000, is larger than the values considered in wall-resolved LES studies of shallow-water Langmuir turbulence reported in literature. The logarithmic layer is diagnosed based on a plateau region in the profile of a diagnostic function. It is found that the logarithmic layer disrupted at Re-tau = 395 reappears at Re-tau = 1000, but the von Karman constant is slightly different from the traditional value 0.41. To study the effects of LCs on turbulence statistics, LCs are extracted using streamwise averaging. The velocity fluctuations u&#39;(i) are decomposed into a LC-coherent part u(i)(L) and a residual turbulence part u(i)(T). It is found that the profiles of LC-coherent. Reynolds shear stress -&lt; u(L)v(L)&gt; obtained at various Reynolds numbers are close to each other in the water-column coordinate y/h, with h being the half-water depth. As the Reynolds number (or, by definition, the ratio between the outer and inner length scales) increases, the influence of LCs on the near-bottom momentum transfer is reduced, which is responsible for the reappearance of the logarithmic layer. At all of the Reynolds numbers under investigation, the peaks of &lt; u(L)u(L)&gt; are collocated in the water-column coordinate y/h, while those of &lt; u(T)u(T)&gt; are collocated in the inner-scale coordinate y/(v/u(tau)). Due to the increase in the distance between the peaks of &lt; u(L)u(L)&gt; and &lt; u(T)u(T)&gt; with the Reynolds number, the profile of &lt; u&#39; u&#39;&gt; forms a bimodal shape at Re-tau 700 and 1000.</p

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases