27 research outputs found
Defect-Induced Rigidity Enhancement in Layered Semiconductors
We discuss the mechanism responsible for the observed improvement in the
structural properties of In doped GaSe, a layered material of great current
interest. Formation energy calculations show that by tuning the Fermi energy,
In can substitute for Ga or can go as an interstitial charged
defect. We find that
dramatically increases the shear stiffness
of GaSe, explaining the observed enhancement in the rigidity of In doped
p-GaSe. The mechanism responsible for rigidity enhancement discussed here is
quite general and applicable to a large class of layered solids with weak
interlayer bonding.Comment: 4 figure