Doping Dependence of Electronic and Mechanical Properties of GaSe\u3csub\u3e1−x\u3c/sub\u3eTe\u3csub\u3ex\u3c/sub\u3e and Ga\u3csub\u3e1−x\u3c/sub\u3eIn\u3csub\u3ex\u3c/sub\u3eSe from First Principles

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