Classification analysis on physicochemical properties of coloured and non-coloured waxy rice

Six coloured and six non-coloured waxy rice varieties were analyzed by determining amylose, fat, and protein content, pasting, and thermal properties. Significant differences in protein content as well as pasting properties between coloured and non-coloured waxy rice were identified. It was demonstrated that protein may have a main influence on pasting and thermal properties of waxy rice. In addition, the optimal linear relationship between protein and pasting or thermal properties was found by combining RVA and DSC data using Principal component analysis (PCA). Typical indicators, which can classify coloured and non-coloured waxy rice, could be identified by Hierarchical cluster analysis (HCA). In pasting properties, trough and consistency viscosity were typical indicators; in thermal properties, enthalpy and stop temperature were typical indicators

Half-metallic antiferromagnets in thiospinels

We have theoretically designed the half-metallic (HM) antiferromagnets (AFMs) in thiospinel systems, $\rm Mn(CrV)S_{4}$ and $\rm Fe_{0.5}Cu_{0.5}(V_{0.5}Ti_{1.5})S_{4}$, based on the electronic structure studies in the local-spin-density approximation (LSDA). We have also explored electronic and magnetic properties of parent spinel compounds of the above systems; $\rm CuV_{2}S_{4}$ and $\rm CuTi_{2}S_{4}$ are found to be HM ferromagnets in their cubic spinel structures, while $\rm MnCr_{2}S_{4}$ is a ferrimagnetic insulator. We have discussed the feasibility of material synthesis of HM-AFM thiospinel systems.Comment: 4 pages, 5 figure

Contributions to the cross shock electric field at supercritical perpendicular shocks: Impact of the pickup ions

A particle-in-cell code is used to examine contributions of the pickup ions (PIs) and the solar wind ions (SWs) to the cross shock electric field at the supercritical, perpendicular shocks. The code treats the pickup ions self-consistently as a third component. Herein, two different runs with relative pickup ion density of 25% and 55% are presented in this paper. Present preliminary results show that: (1) in the low percentage (25%) pickup ion case, the shock front is nonstationary. During the evolution of this perpendicular shock, a nonstationary foot resulting from the reflected solar wind ions is formed in front of the old ramp, and its amplitude becomes larger and larger. At last, the nonstationary foot grows up into a new ramp and exceeds the old one. Such a nonstationary process can be formed periodically. hen the new ramp begins to be formed in front of the old ramp, the Hall term mainly contributed by the solar wind ions becomes more and more important. The electric field Ex is dominated by the Hall term when the new ramp exceeds the old one. Furthermore, an extended and stationary foot in pickup ion gyro-scale is located upstream of the nonstationary/self-reforming region within the shock front, and is always dominated by the Lorentz term contributed by the pickup ions; (2) in the high percentage (55%) pickup ion case, the amplitude of the stationary foot is increased as expected. One striking point is that the nonstationary region of the shock front evidenced by the self-reformation disappears. Instead, a stationary extended foot dominated by Lorentz term contributed by the pickup ions, and a tationary ramp dominated by Hall term contributed by the solar wind ions are clearly evidenced. The significance of the cross electric field on ion dynamics is also discussed.Comment: 11 pages, 6 figs and 1 table. This paper will be published in the journal: Astrophysics and Space Scienc

Nonconstant electronic density of states tunneling inversion for A15 superconductors: Nb3Sn

We re-examine the tunneling data on A15 superconductors by performing a generalized McMillan-Rowell tunneling inversion that incorporates a nonconstant electronic density of states obtained from band-structure calculations. For Nb3Sn, we find that the fit to the experimental data can be slightly improved by taking into account the sharp structure in the density of states, but it is likely that such an analysis alone is not enough to completely explain the superconducting tunneling characteristics of this material. Nevertheless, the extracted Eliashberg function displays a number of features expected to be present for the highest quality Nb3Sn samples.Comment: 11 pages, 11 figure

Mapping of periodically poled crystals via spontaneous parametric down-conversion

A new method for characterization of periodically poled crystals is developed based on spontaneous parametric down-conversion. The method is demonstrated on crystals of Y:LiNbO3, Mg:Y:LiNbO3 with non-uniform periodically poled structures, obtained directly under Czochralski growth procedure and designed for application of OPO in the mid infrared range. Infrared dispersion of refractive index, effective working periods and wavelengths of OPO were determined by special treatment of frequency-angular spectra of spontaneous parametric down-conversion in the visible range. Two-dimensional mapping via spontaneous parametric down-conversion is proposed for characterizing spatial distribution of bulk quasi-phase matching efficiency across the input window of a periodically poled sample.Comment: 19 pages, 6 figure

Screened Coulomb interactions in metallic alloys: II Screening beyond the single-site and atomic sphere approximations

A quantitative description of the configurational part of the total energy of metallic alloys with substantial atomic size difference cannot be achieved in the atomic sphere approximation: It needs to be corrected at least for the multipole moment interactions in the Madelung part of the one-electron potential and energy. In the case of a random alloy such interactions can be accounted for only by lifting the atomic sphere and single-site approximations, in order to include the polarization due to local environment effects. Nevertheless a simple parameterization of the screened Coulomb interactions for the ordinary single-site methods, including the generalized perturbation method, is still possible. We obtained such a parameterization for bulk and surface NiPt alloys, which allows one to obtain quantitatively accurate effective interactions in this system.Comment: 24 pages, 2 figure

Probing Ion-Ion and Electron-Ion Correlations in Liquid Metals within the Quantum Hypernetted Chain Approximation

We use the Quantum Hypernetted Chain Approximation (QHNC) to calculate the ion-ion and electron-ion correlations for liquid metallic Li, Be, Na, Mg, Al, K, Ca, and Ga. We discuss trends in electron-ion structure factors and radial distribution functions, and also calculate the free-atom and metallic-atom form-factors, focusing on how bonding effects affect the interpretation of X-ray scattering experiments, especially experimental measurements of the ion-ion structure factor in the liquid metallic phase.Comment: RevTeX, 19 pages, 7 figure

BAs and boride III-V alloys

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.Comment: 18 pages, 14 figures, 6 tables, 61 references. Accepted for publication in Phys. Rev. B. Scheduled to appear Oct. 15 200