Room-temperature larger-scale highly ordered nanorod imprints of ZnO film

Cataloged from PDF version of article.Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a high-temperature process. with a 600 nm pitch on top of a critical 200 nm thick Imprinting ZnO nanorods of 200 nm in diameter and 200 nm in height continuous ZnO wetting layer, the light output power of the resulting integrated ZnO-nanorod-film/semi-transparent metal/GaN/InGaN LED shows a two-fold enhancement (100% light extraction efficiency improvement) at the injection current of 150 mA, in comparison with the conventional LED without the imprint film. The increased optical output is well explained by the enhanced light scattering and outcoupling of the ZnOrod structures along with the wetting film, as verified by the numerical simulations. The wetting layer is found to be essential for better impedance matching. The current-voltage characteristics and electroluminescence measurements confirm that there is no noticeable change in the electrical or spectral properties of the final LEDs after ZnO-nanorod film integration. These results suggest that the low-cost high-quality large-scale ZnOnanorod imprints hold great promise for superior LED light extraction. ©2013 Optical Society of Americ

A PN-type quantum barrier for InGaN/GaN light emitting diodes

Cataloged from PDF version of article.In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. (C) 2013 Optical Society of Americ

Morphology-Tailored Synthesis of Tungsten Trioxide (Hydrate) Thin Films and Their Photocatalytic Properties

Cataloged from PDF version of article.Tungsten trioxide hydrate (3WO(3)center dot H(2)O) films with different morphologies were directly grown on fluorine doped tin oxide (FTO) subsi:rate via a facile crystal-seed-assisted hydrothermal method. Scanning electron microscopy (SEM) analysis showed that 3WO(3)center dot H(2)O thin films composed of platelike, wedgelike, and sheetlike nanostructures could be selectively synthesized by adding Na(2)SO(4), (NH(4))(2)SO(4), and CH(3)COONH(4) as capping agents, respectively. X-ray diffraction (XRD) studies indicated that these films were of orthorhombic structure. The as-prepared thin films after dehydration showed obvious photcicatalytic activities. The best film grown using CH(3)COONH(4) as a capping agent generated anodic photocurrents of 1.16 mA/cm(2) fork oxidization of methanol and 0.5 mA/cm(2) for water splitting with the highest photoconversion efficiency of about 0.3% under simulated solar illumination

Design and Realization of a Fully On-Chip High-Q Resonator at 15 GHz on Silicon

Cataloged from PDF version of article.We develop and demonstrate an on-chip resonator working at 15 GHz with a high quality factor (Q-factor) of 93.81 while only requiring a small chip size of 195 mu m x 195 mu m on Si by using our new design methodology. In our design, unlike previous approaches, we avoid the need for any external capacitance for tuning; instead, we utilize the film capacitance as the capacitor of the LC tank circuit and realize a fully on-chip resonator that shows a strong transmission dip of > 30 dB on resonance as required for telemetric-sensing applications. We present the design, theory, methodology, microfabrication, experimental characterization, and theoretical analysis of these resonators. We also demonstrate that the experimental results are in excellent agreement with the theoretical (both analytical and numerical) results. Based on our proof-of-concept demonstration, such high-Q on-chip resonators hold great promise for use in transmissive telemetric sensors

InGaN/GaN light-emitting diode with a polarization tunnel junction

Cataloged from PDF version of article.We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

Cataloged from PDF version of article.A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694054

Macrocrystals of Colloidal Quantum Dots in Anthrancene: Exciton Trannsfer and Polarized Emission

Cataloged from PDF version of article.In this work, centimeter-scale macrocrystals of nonpolar colloidal quantum dots (QDs) incorporated into anthracene were grown for the first time. The exciton transfer from the anthracene host to acceptor QDs was systematically investigated, and anisotropic emission from the isotropic QDs in the anthracene macrocrystals was discovered. Results showed a decreasing photoluminescence lifetime of the donor anthracene, indicating a strengthening energy transfer with increasing QD concentration in the macrocrystals. With the anisotropy study, QDs inside the anthracene host acquired a polarization ratio of similar to 1.5 at 0 degrees collection angle, and this increases to similar to 2.5 at the collection angle of 60 degrees. A proof-of-concept application of these excitonic macrocrystals as tunable color converters on light-emitting diodes was also demonstrated

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

Cataloged from PDF version of article.In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination. (C) 2014 AIP Publishing LLC

Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

Cataloged from PDF version of article.InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly. (C) 2014 AIP Publishing LLC