3,183 research outputs found
Magnus Force in Discrete and Continuous Two-Dimensional Superfluids
Motion of vortices in two-dimensional superfluids in the classical limit is
studied by solving the Gross-Pitaevskii equation numerically on a uniform
lattice. We find that, in the presence of a superflow directed along one of the
main lattice periods, vortices move with the superflow on fine lattices but
perpendicular to it on coarse ones. We interpret this result as a transition
from the full Magnus force in the Galilean-invariant limit to vanishing
effective Magnus force in a discrete system, in agreement with the existing
experiments on vortex motion in Josephson junction arrays.Comment: 6 pages, 7 figures; published in Phys. Rev.
200 mm Sensor Development Using Bonded Wafers
Sensors fabricated from high resistivity, float zone, silicon material have
been the basis of vertex detectors and trackers for the last 30 years. The
areas of these devices have increased from a few square cm to for
the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS
and ATLAS tracker upgrades will each require more than of silicon
and the CMS High Granularity Calorimeter (HGCAL) will require more than $600\
m^2200 mm$ wafers using wafer bonding technology. Results of development runs
with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer
technologies are reported.Comment: 11 page
Charge Collection and Electrical Characterization of Neutron Irradiated Silicon Pad Detectors for the CMS High Granularity Calorimeter
The replacement of the existing endcap calorimeter in the Compact Muon
Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for
2027, will be a high granularity calorimeter. It will provide detailed
position, energy, and timing information on electromagnetic and hadronic
showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter
(HGCAL) will use 120-, 200-, and 300- thick silicon (Si) pad
sensors as the main active material and will sustain 1-MeV neutron equivalent
fluences up to about . In order
to address the performance degradation of the Si detectors caused by the
intense radiation environment, irradiation campaigns of test diode samples from
8-inch and 6-inch wafers were performed in two reactors. Characterization of
the electrical and charge collection properties after irradiation involved both
bulk polarities for the three sensor thicknesses. Since the Si sensors will be
operated at -30 C to reduce increasing bulk leakage current with
fluence, the charge collection investigation of 30 irradiated samples was
carried out with the infrared-TCT setup at -30 C. TCAD simulation
results at the lower fluences are in close agreement with the experimental
results and provide predictions of sensor performance for the lower fluence
regions not covered by the experimental study. All investigated sensors display
60 or higher charge collection efficiency at their respective highest
lifetime fluences when operated at 800 V, and display above 90 at the
lowest fluence, at 600 V. The collected charge close to the fluence of
exceeds 1 fC at voltages
beyond 800 V.Comment: 36 pages, 34 figure
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