11 research outputs found
Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature
No full textAu/ZnO/n-Si device was obtained by using atomic layer deposition (ALD) technique, and it was characterized by I–V measurement in a wide temperature from 100 to 380 K with 20 K steps. XRD measurements were performed on ZnO thin film layer, and (002) and (201) peaks were seen in XRD pattern of the film. Surface morphology and cross section of the device were taken by SEM and discussed in the details. Some device parameters such as barrier height, ideality factor, series resistance were calculated by thermionic emission theory (TE), using Cheung’s and Norde’s functions. The Calculation results revealed that all device parameters strongly depended on temperature changing. In addition, interface states (Nss) graphs were plotted and discussed according to energy levels and measurement temperatures. It can be concluded that this device can be used in various technological applications in wide range temperatures in industry. © 2017, Springer Science+Business Media, LLC
Ruthenium (III)–pyridine complex: Synthesis, characterization, barrier diode and photodiode applications in Al/Ru-Py/p-Si/Al sandwich device structure
No full textI–V–T (current–voltage–temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device
No full textInfluence of annealing temperature and electrical conductivity of α-Fe2O3 nanoparticles for Schottky barrier diode
No full textLow power and stable resistive switching in graphene oxide-based RRAM embedded with ZnO nanoparticles for nonvolatile memory applications
No full textSynthesis of CuO–graphene nanocomposite material and the effect of gamma radiation on CuO–graphene/p-Si junction diode
No full textIllumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
No full textTemperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique
No full textFabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies
No full textOn the electrical characterization of platinum octaethylporphyrin (PtOEP)/Si hybrid device
No full text
