Growth and characterization of (ZnSe)0.1(SnSe)0.9 films for use in thin film solar cells

(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given

GROWTH AND CHARACTERIZATION OF (ZnSe)0.1(SnSe)0.9 FILMS FOR USE IN THIN FILM SOLAR CELLS

(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given

Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells

We have fabricated ZnxSn1−xSe (ZTSe) films for the first time. Samples were fabricated by chemical molecular beam deposition method at atmospheric pressure in hydrogen flow. ZnSe and SnSe powders with 99.999% purity were used as precursors. The temperature of precursors varied in the range of (850–950) °C. Films were deposited at substrate temperature of (500–600) °C. Borosilicate glass was used as a substrate. We have studied ZTSe films by EDS, XRD and SEM. The samples had orthorhombic and cubic structures depending on composition. Results of EDS have shown that stoichiometric composition of samples moved to ZnSe side by increasing with substrate temperature. SEM pictures have shown that samples had polycrystalline structure. The grain size varied in the range of (2–15) µm. The grain size of samples increased from (2–5) µm to (15–20) µm for substrate temperatures of 500 °C and 550 °C respectively. While, at a substrate temperature of 600 °C the grain size decreased up to (3–5) µm, possibly, because of increasing of ZnSe content. XRD analysis has shown that samples have ZnSe, SnSe, Se and Sn phases. The band gap of samples varied in the range of 1.0–2.0 eV depending on the film compositions. An inversion of the conductivity type was found: samples fabricated at 500 °C and 550 °C performed of p-type conductivity; while samples fabricated at 600 °C showed n-type conductivity

Comunidad Valenciana: La Economía de la Comunidad Valenciana, balance de la situación de 2000

Este artículo realiza un balance de situación de la economía de la Comunidad Valenciana en 2000. En el primer punto abordaremos la evolución del entorno económico internacional y nacional a lo largo de dicho ejercicio. En el segundo se analiza la evolución de la economía de la Comunidad Valenciana, tomando como referencia el total nacional y las diferentes Comunidades Autónomas, desde cuatro puntos de vista: en primer lugar, desde la óptica de la producción, a través de la Contabilidad Trimestral; en segundo lugar se muestra la dinámica del mercado de trabajo en 2000, en el tercero se expone la evolución de los precios y salarios, en el cuarto se completa el análisis mostrando la evolución más reciente de la economía valenciana a través de los diferentes indicadores de coyuntura disponibles. En el punto tercero se comentan los escenarios de comportamiento futuro de la economía de la Comunidad Valenciana, enmarcadas en el contexto internacional y nacional

Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

SnSe thin films were fabricated the first time by chemical molecular beam deposition (CMBD) in atmospheric pressure hydrogen flow using polycrystalline tin selenium (SnSe) precursors. The morphological and electrical properties of the films were studied as a function of the precursor's composition and the substrate temperature. Experimental data indicate that in the resulting thin films Se enrichment takes place at low substrate temperatures, despite the different compositions of the SnSe precursor during the synthesis. In this case, the grain sizes of the films vary in the range of (8-20) mu m, depending on the substrate temperature. In addition, X-ray diffraction analysis of the samples shows that the films have an orthorhombic crystalline structure. The electrical conductivity of films measured by van der Pauw method varies between 6 and 90 (Omega x cm)(-1). The optical measurements on selected SnSe thin films illustrate that the samples have an optical bandgap of (1.1-1.2) eV and the absorption coefficient of similar to 10(5) cm(-1), which is suitable for thin film solar cells