Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.Comment: 7 pages, REVTeX. Mistake corrected; in the limit of a large chiral splitting the correction to the conductivity does not vanish but approaches the symplectic valu

Zero-Field Satellites of a Zero-Bias Anomaly

Spin-orbit (SO) splitting, $\pm \omega_{SO}$, of the electron Fermi surface in two-dimensional systems manifests itself in the interaction-induced corrections to the tunneling density of states, $\nu (\epsilon)$. Namely, in the case of a smooth disorder, it gives rise to the satellites of a zero-bias anomaly at energies $\epsilon=\pm 2\omega_{SO}$. Zeeman splitting, $\pm \omega_{Z}$, in a weak parallel magnetic field causes a narrow {\em plateau} of a width $\delta\epsilon=2\omega_{Z}$ at the top of each sharp satellite peak. As $\omega_{Z}$ exceeds $\omega_{SO}$, the SO satellites cross over to the conventional narrow maxima at $\epsilon = \pm 2\omega_{Z}$ with SO-induced plateaus $\delta\epsilon=2\omega_{SO}$ at the tops.Comment: 7 pages including 2 figure

Orbital mechanism of the circular photogalvanic effect in quantum wells

It is shown that the free-carrier (Drude) absorption of circularly polarized radiation in quantum well structures leads to an electric current flow. The photocurrent reverses its direction upon switching the light helicity. A pure orbital mechanism of such a circular photogalvanic effect is proposed that is based on interference of different pathways contributing to the light absorption. Calculation shows that the magnitude of the helicity dependent photocurrent in $n$-doped quantum well structures corresponds to recent experimental observations.Comment: 5 pages, 2 figures, to be published in JETP Letter

Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling

Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with spin-orbit coupling (SOC). Here, we develop a theory of coupled spin-charge diffusive transport in two-dimensional spin-valve devices. The theory describes a realistic proximity-induced SOC with both spatially uniform and random components of the SOC due to adatoms and imperfections, and applies to the two dimensional electron gases found in two-dimensional materials and van der Walls heterostructures. The various charge-to-spin conversion mechanisms known to be present in diffusive metals, including the spin Hall effect and several mechanisms contributing current-induced spin polarization are accounted for. Our analysis shows that the dominant conversion mechanisms can be discerned by analyzing the nonlocal resistance of the spin-valve for different polarizations of the injected spins and as a function of the applied in-plane magnetic field

Berry phase and adiabaticity of a spin diffusing in a non-uniform magnetic field

An electron spin moving adiabatically in a strong, spatially non-uniform magnetic field accumulates a geometric phase or Berry phase, which might be observable as a conductance oscillation in a mesoscopic ring. Two contradicting theories exist for how strong the magnetic field should be to ensure adiabaticity if the motion is diffusive. To resolve this controversy, we study the effect of a non-uniform magnetic field on the spin polarization and on the weak-localization effect. The diffusion equation for the Cooperon is solved exactly. Adiabaticity requires that the spin-precession time is short compared to the elastic scattering time - it is not sufficient that it is short compared to the diffusion time around the ring. This strong condition severely complicates the experimental observation.Comment: 16 pages REVTEX, including 3 figure

Conduction band spin splitting and negative magnetoresistance in A3B5{\rm A}_3{\rm B}_5 heterostructures

The quantum interference corrections to the conductivity are calculated for an electron gas in asymmetric quantum wells in a magnetic field. The theory takes into account two different types of the spin splitting of the conduction band: the Dresselhaus terms, both linear and cubic in the wave vector, and the Rashba term, linear in wave vector. It is shown that the contributions of these terms into magnetoconductivity are not additive, as it was traditionally assumed. While the contributions of all terms of the conduction band splitting into the D'yakonov--Perel' spin relaxation rate are additive, in the conductivity the two linear terms cancel each other, and, when they are equal, in the absence of the cubic terms the conduction band spin splitting does not show up in the magnetoconductivity at all. The theory agrees very well with experimental results and enables one to determine experimentally parameters of the spin-orbit splitting of the conduction band.Comment: 8 pages, RevTeX, 4 Postscript figure

Hall-like effect induced by spin-orbit interaction

The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave of a proper polarization induces voltage drop perpendicularly to the direct current flow between source and drain of the considered four-terminal cross-structure. The resulting Hall-like resistance is estimated to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available structures. The effect becomes more pronounced in the vicinity of resonances where Hall-like resistance changes its sign as function of the Fermi energy.Comment: 4 pages (RevTeX), 4 figures, will appear in Phys. Rev. Let

Non-Abelian Geometric Phases and Conductance of Spin-3/2 Holes

Angular momentum $J=3/2$ holes in semiconductor heterostructures are showed to accumulate nonabelian geometric phases as a consequence of their motion. We provide a general framework for analyzing such a system and compute conductance oscillations for a simple ring geometry. We also analyze a figure-8 geometry which captures intrinsically nonabelian interference effects.Comment: 4 pages, 3 figures (encapsulated PostScript) Replaced fig. 1 and fig.