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    Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

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    Abstract—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V · s). Index Terms—Hafnium oxide, high permittivity, organic thinfilm transistor (OTFT), solution process, surface energy

    N-(1-Acetyl-5-benzoyl-1,4,5,6-tetra­hydro­pyrrolo­[3,4-c]pyrazol-3-yl)benzamide

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    In the mol­ecule of the title compound, C21H18N4O3, the fused pyrrolo­[3,4-c]pyrazole ring system is approximately planar [maximum deviation = 0.0486 (16) Å] and forms dihedral angles of 87.21 (8) and 35.46 (7)° with the phenyl rings. In the crystal, N—H⋯O and C—H⋯O hydrogen bonds and weak C—H⋯π inter­actions link the mol­ecules into chains parallel to [201]
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