Anomalous Surface Impedance in a Normal-metal/Superconductor Junction with a Spin-active Interface

We discuss the surface impedance (Z=R-iX) of a normal-metal/superconductor proximity structure taking into account the spin-dependent potential at the junction interface. Because of the spin mixing transport at the interface, odd-frequency spin-triplet s-wave Cooper pairs penetrate into the normal metal and cause the anomalous response to electromagnetic fields. At low temperature, the local impedance at a surface of the normal metal shows the nonmonotonic temperature dependence and the anomalous relation R>X. We also discuss a possibility of observing such anomalous impedance in experiments.Comment: 7pages, 7 figure

Rationale and practical techniques for mouse models of early vein graft adaptations

Mouse models serve as relatively new yet powerful research tools to study intimal hyperplasia and wall remodeling of vein bypass graft failure. Several model variations have been reported in the past decade. However, the approach demands thoughtful preparation, selected sophisticated equipment, microsurgical technical expertise, advanced tissue processing, and data acquisition. This review compares several described models and aims (building on our personal experiences) to practically aid the investigators who want to utilize mouse models of vein graft failure.Clinical RelevanceSurgical revascularization via vein grafting offers immediate and often dramatic end organ benefit. However, substantial percentages of vein conduits placed develop stenosis or fail, often early. Mechanistic studies of the complex interplay between the biologic and physical forces that drive failure have been hampered by limited quantity and quality of clinical specimens, and the inability of systems such as computer models and cell culture to mimic the clinical circumstance. This review summarizes the power and limitations of mouse vein graft models, and it includes practical experience-based advice for researchers aiming to utilize this tool

Timing-Dependent Actions of NGF Required for Cell Differentiation

BACKGROUND: Continuous NGF stimulation induces PC12 cell differentiation. However, why continuous NGF stimulation is required for differentiation is unclear. In this study, we investigated the underlying mechanisms of the timing-dependent requirement of NGF action for cell differentiation. METHODOLOGY/PRINCIPAL FINDINGS: To address the timing-dependency of the NGF action, we performed a discontinuous stimulation assay consisting of a first transient stimulation followed by an interval and then a second sustained stimulation and quantified the neurite extension level. Consequently, we observed a timing-dependent action of NGF on cell differentiation, and discontinuous NGF stimulation similarly induced differentiation. The first stimulation did not induce neurite extension, whereas the second stimulation induced fast neurite extension; therefore, the first stimulation is likely required as a prerequisite condition. These observations indicate that the action of NGF can be divided into two processes: an initial stimulation-driven latent process and a second stimulation-driven extension process. The latent process appears to require the activities of ERK and transcription, but not PI3K, whereas the extension-process requires the activities of ERK and PI3K, but not transcription. We also found that during the first stimulation, the activity of NGF can be replaced by PACAP, but not by insulin, EGF, bFGF or forskolin; during the second stimulation, however, the activity of NGF cannot be replaced by any of these stimulants. These findings allowed us to identify potential genes specifically involved in the latent process, rather than in other processes, using a microarray. CONCLUSIONS/SIGNIFICANCE: These results demonstrate that NGF induces the differentiation of PC12 cells via mechanically distinct processes: an ERK-driven and transcription-dependent latent process, and an ERK- and PI3K-driven and transcription-independent extension process

Spin-Orbit Integrated Ground State and Magnetic Anisotropy in Sr2_2IrO4_4

We present a microscopic model for the anisotropic exchange interactions in Sr$_{2}$IrO$_{4}$. A direct construction of Wannier functions from first-principles calculations proves the $j_{\mathrm{eff}}$=1/2 character of the spin-orbit integrated states at the Fermi level. An effective $j_{\mathrm{eff}}$-spin Hamiltonian explains the observed weak ferromagnetism and anisotropy of antiferromagnetically ordered magnetic state, which arise naturally from the $j_{\mathrm{eff}}$=1/2 state with a rotation of IrO$_{6}$ octahedra. It is suggested that Sr$_{2}$IrO$_{4}$ is a unique class of materials with effective exchange interactions in the spin-orbital Hilbert space.Comment: 5 pages, 3 figure

Continuous Spatial Tuning of Laser Emissions in a Full Visible Spectral Range

In order to achieve a continuous tuning of laser emission, the authors designed and fabricated three types of cholesteric liquid crystal cells with pitch gradient, a wedge cell with positive slope, a wedge cell with negative slope, and a parallel cell. The length of the cholesteric liquid crystal pitch could be elongated up to 10 nm, allowing the lasing behavior of continuous or discontinuous spatial tuning determined by the boundary conditions of the cholesteric liquid crystal cell. In the wedge cell with positive slope, the authors demonstrated a continuous spatial laser tuning in the near full visible spectral range, with a tuning resolution less than 1 nm by pumping with only a single 355 nm laser beam. This continuous tuning behavior is due to the fact that the concentration of pitch gradient matches the fixed helical pitch determined by the cell thickness. This characteristic continuous spatial laser tuning could be confirmed again by pumping with a 532 nm laser beam, over 90 nm in the visible spectral range. The scheme of the spatial laser tuning in the wedge cell bearing a pitch gradient enabled a route to designing small-sized optical devices that allow for a wide tunability of single-mode laser emissions

Nanomechanical Properties and Phase Transitions in a Double-Walled (5,5)@(10,10) Carbon Nanotube: ab initio Calculations

The structure and elastic properties of (5,5) and (10,10) nanotubes, as well as barriers for relative rotation of the walls and their relative sliding along the axis in a double-walled (5,5)@(10,10) carbon nanotube, are calculated using the density functional method. The results of these calculations are the basis for estimating the following physical quantities: shear strengths and diffusion coefficients for relative sliding along the axis and rotation of the walls, as well as frequencies of relative rotational and translational oscillations of the walls. The commensurability-incommensurability phase transition is analyzed. The length of the incommensurability defect is estimated on the basis of ab initio calculations. It is proposed that (5,5)@(10,10) double-walled carbon nanotube be used as a plain bearing. The possibility of experimental verification of the results is discussed.Comment: 14 page

Atomically-thin metallic Si and Ge allotropes with high Fermi velocities

Silicon and germanium are the well-known materials used to manufacture electronic devices for the integrated circuits but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures which are more stable than the extensively studied semimetallic silicene and germanene, respectively. More importantly, the newly discovered two-dimensional allotropes of Si and Ge have Fermi velocities superior to the Dirac fermions in graphene, indicating that the metal wires needed in the silicon-based integrated circuits can be made of Si atom itself without incompatibility, allowing for all-silicon-based integrated circuits.Comment: 10 pages, 3 figures, 1 tabl

Control of the bias tilt angles in nematic liquid crystals

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in S. V. Yablonskii, K. Nakayama, S. Okazaki, M. Ozaki, K. Yoshino, S. P. Palto, M. Yu. Baranovich, and A. S. Michailov, Journal of Applied Physics 85, 2556 (1999) and may be found at https://doi.org/10.1063/1.369574