Modern CFD applications for the design of a reacting shear layer facility

The RPLUS2D code, capable of calculating high speed reacting flows, was adopted to design a compressible shear layer facility. In order to create reacting shear layers at high convective Mach numbers, hot air streams at supersonic speeds, rendered by converging-diverging nozzles, must be provided. A finite rate chemistry model is used to simulate the nozzle flows. Results are compared with one-dimensional solutions at chemical equilibrium. Additionally, a two equation turbulence model with compressibility effects was successfully incorporated with the RPLUS code. The model was applied to simulate a supersonic shear layer. Preliminary results show favorable comparisons with the experimental data

Evaluation of aerothermal modeling computer programs

Various computer programs based upon the SIMPLE or SIMPLER algorithm were studied and compared for numerical accuracy, efficiency, and grid dependency. Four two-dimensional and one three-dimensional code originally developed by a number of research groups were considered. In general, the accuracy and computational efficieny of these TEACH type programs were improved by modifying the differencing schemes and their solvers. A brief description of each program is given. Error reduction, spline flux and second upwind differencing programs are covered

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Normal metal - insulator - superconductor interferometer

Hybrid normal metal - insulator - superconductor microstructures suitable for studying an interference of electrons were fabricated. The structures consist of a superconducting loop connected to a normal metal electrode through a tunnel barrier . An optical interferometer with a beam splitter can be considered as a classical analogue for this system. All measurements were performed at temperatures well below 1 K. The interference can be observed as periodic oscillations of the tunnel current (voltage) through the junction at fixed bias voltage (current) as a function of a perpendicular magnetic field. The magnitude of the oscillations depends on the bias point. It reaches a maximum at energy $eV$ which is close to the superconducting gap and decreases with an increase of temperature. Surprisingly, the period of the oscillations in units of magnetic flux $\Delta \Phi$ is equal neither to $h/e$ nor to $h/2e$, but significantly exceeds these values for larger loop circumferences. The origin of the phenomena is not clear.Comment: 11 pages and 8 figure

n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design

The only II‐VI/II‐VI wide band‐gap heterojunction to provide both good lattice match and p‐ and n‐type dopability is CdSe/ZnTe. We have carried out numerical simulations of several light emitter designs incorporating CdSe, ZnTe, and Mg alloys. In the simulations, Poisson’s equation is solved in conjunction with the hole and electron current and continuity equations. Radiative and nonradiative recombination in bulk material and at interfaces are included in the model. Simulation results show that an n‐CdSe/p‐ZnTe heterostructure is unfavorable for efficient wide band‐gap light emission due to recombination in the CdSe and at the CdSe/ZnTe interface. An n‐CdSe/Mg_(x)Cd_(1−x)Se/p‐ZnTe heterostructure significantly reduces interfacial recombination and facilitates electron injection into the p‐ZnTe layer. The addition of a Mg_(y)Zn_(1−y)Te electron confining layer further improves the efficiency of light emission. Finally, an n‐CdSe/Mg_(x)Cd_(1−x)Se/Mg_(y)Zn_(1−y)Te/p‐ZnTe design allows tunability of the wavelength of light emission from green into the blue wavelength regime

Two-band modeling of narrow band gap and interband tunneling devices

A two-band transfer matrix method has been developed to study tunneling currents in narrow gap and interband tunnel structures. This relatively simple model gives good agreement with recently reported experimental results for InAs/AlSb/InAs/AlSb/InAs double-barrier heterostructures and InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling devices, and should be useful in the design of new interband tunneling devices