23 research outputs found

    Metamaterials and chiral sensing: a review of fundamentals and applications

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    Chirality, a property of broken mirror symmetry, prevails in nature. Chiral molecules show different biochemical behaviors to their mirror molecules. For left or right circularly polarized lights, the fundamental chiral states of electromagnetic fields interact differently with chiral matter, and this effect has been used as a powerful tool for the detection of chiral molecules. This optical sensing, also termed chiral sensing, is not only easy to implement but also non-invasive to the analytes. However, the measurements made by the optical sensing of chiral molecules are challenging, as chiroptical signals are extremely weak. Recent years have seen active research efforts into metamaterial and plasmonic platforms for manipulating local fields to enhance chiroptical signals. This metamaterial approach offers new possibilities of chiral sensing with high sensitivity. Here, we review the recent advances in chiral sensing using metamaterial and plasmonic platforms. In addition, we explain the underlying principles behind the enhancement of chiroptical signals and highlight practically efficient chiral sensing platforms. We also provide perspectives that shed light on design considerations for chiral sensing metamaterials and discuss the possibility of other types of chiral sensing based on resonant metamaterials

    Deterministic reflection contrast ellipsometry for thick multilayer two-dimensional heterostructures

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    Optical spectroscopy is a powerful tool for characterizing the properties of two-dimensional (2D) heterostructures. However, extracting the permittivity information of each 2D layer in optically thick heterostructures is challenging because of interference. To accurately measure the optical permittivity of each 2D layer in a heterostructure or on a substrate with a thick insulating spacer, such as oxides, we propose deterministic reflection contrast ellipsometry (DRCE). Our DRCE method has two advantages over conventional techniques. It deterministically measures the optical permittivity of 2D materials using only the measured reflection spectra of the heterostructure, rather than dispersion fitting as in spectroscopic ellipsometry. Additionally, the DRCE is free of excitonic energy errors in reflection-contrast spectroscopy. We believe that DRCE will enable accurate and rapid characterization of 2D materials

    Microscopic Origin of Surface-Enhanced Circular Dichroism

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    Circular dichroism (CD), the difference in absorption of two opposite circularly polarized light sources by chiral molecules, can be significantly enhanced when molecules are adsorbed on the surface of nanostructures. We present a theory based on Poynting’s theorem adapted for chiral media to analyze the surface-enhanced CD of a chiral molecule/nanostructure coupled system. Our theory clarifies the microscopic origin of surface-enhanced CD signals by showing that the enhanced CD has two forms, inherent and induced. The inherent CD is the direct molecular CD that becomes enhanced due to the strongly localized optical helicity density near the nanostructure. The induced CD, previously ignored, derives from asymmetric excitation and absorption of electromagnetic fields inside the nanostructures surrounded by chiral molecules upon the injection of two oppositely circularly polarized light sources. Moreover, it is demonstrated that the induced CD can contribute significantly to the CD signals measured by surface-enhanced chiroptical spectroscopy

    Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

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    In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For this aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared and examined. First, we carry out the field driven turn-on process to form Ag filaments created as a consequence of sequential nucleation of Ag ions from the bottom electrode. During the filament formation process, it is observed that the prepared devices show switching time exponential in voltage and temperature with different nucleation barrier energies (W-0), which confirms the field-induced nucleation theory. Furthermore, we find that the device with higher W-0 shows faster dissolution speed. This implies that the slow turn-off speed of the TS device can be improved by finding a material system with a higher W-0 value. Published by AIP Publishing.116sciescopu

    Measuring the optical permittivity of two-dimensional materials without a priori knowledge of electronic transitions

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    We propose a deterministic method to measure the optical permittivity of two-dimensional (2D) materials without a priori knowledge of the electronic transitions over the spectral window of interest. Using the thin-film approximation, we show that the ratio of reflection coefficients for s and p polarization can give a unique solution to the permittivity of 2D materials within the measured spectral window. The uniqueness and completeness of our permittivity measurement method do not require a priori knowledge of the electronic transitions of a given material. We experimentally demonstrate that the permittivity of monolayers of MoS2, WS2, and WSe2 in the visible frequency range can be accurately obtained by our method. We believe that our method can provide fast and reliable measurement of the optical permittivity of newly discovered 2D materials

    CMOS compatible low-power volatile atomic switch for steep-slope FET devices

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    In this paper, we demonstrate a volatile atomic switch that can be utilized for obtaining steep subthreshold swing (SS) (60 mV/dec). The result shows an improvement in the SS, which results from the transition of the atomic switch between the ON and OFF states, which is caused by the formation and rupture of a conductive filament. As a result, excellent switching characteristics are obtained for the FETs, such as low I-OFF (similar to 10(-5) mu A/mu m), high I-NO/I-OFF ratio (similar to 10(-5)), low V-DD (similar to 0.25 V), and steep SS (<5 mV/dec). Published by AIP Publishing.11Nsciescopu
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