Specialities of optical FET with tin-doped junction channel

This paper deals with researches of phototransistor based on gallium arsenide with tin-doped channel. It is experimentally shown, that in contrast to usual phototransistors with tellurium-doped channels, gate photocurrents are constant, i.e. independent on blocking voltage, and these currents grow with light intensity increase. At that time total photo sensitivity is smoothly controlled by working voltage and it achieves high values, current sensitivity achieves 8.26×102 A/W, voltage sensitivity achieves 1.3×108 V/W

Optical FET output characteristics research in light-activated mode

This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-gate junction. Criteria of base region effective modulation are specified. Obtained results can be used in design of new generation transistors

An injection-type field-emission photodiode

A new photodiode based on pAlInGaAs–nGaAs–m-junctions is suggested. High photosensitivity in the diode is attained in the conditions of forward bias of the p-n-heterojunction and cut-off of the n-m-junction. Under such conditions, illumination of the structure from the intrinsic or impurity domain of the spectrum leads to diminishing the resistance of the base area due to photocarriers generated, which leads to an immediate increase in the injection current through the forward-biased p-n-junction. At the same time, the field in the cut-off n-m-junction grows together with the voltage applied. These diodes can be used for recording optical and laser radiation in the 0.8–1.6 μm range

THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES

This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity

Influence of neutron radiation on breakdown voltage of silicon voltage limiter

Experimental study of silicon voltage limiters’ breakdown voltage dependence on neutron radiation was conducted. It revealed that with increase of radiation density from 0.1×1014 to 2×1015 N/cm2 the breakdown voltage monotonously increases: the smaller the breakdown voltage, the higher radiation density is needed to provide nominal breakdown voltage. Test curves which may be used for stabilization (normalization) of the breakdown voltage for samples with technological variations are suggested

On mechanism of radiative sensitivity of power diode direct voltage drop

There are carried out experimental researches of dependence of drop of direct voltage of current-voltage characteristics of the silicone power diode on electrons radiation dose. It is stated that dose increase from 2×1014 to 2×1015 Фe/cm2 results in direct voltage drop on the diode increases monotonically, and the lifetime of the minority charge carriers decreases by a factor of ten. It is shown the dominating role of decrease of minority charge carriers density in the base together with majority charge carries lifetime at forming of current-voltage characteristics of after irradiation by electrons