863 research outputs found
Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures
We report the design and development of a piezoelectric sample rotation
system, and its integration into an Oxford Instruments Kelvinox 100 dilution
refrigerator, for orientation-dependent studies of quantum transport in
semiconductor nanodevices at millikelvin temperatures in magnetic fields up to
10T. Our apparatus allows for continuous in situ rotation of a device through
>100deg in two possible configurations. The first enables rotation of the field
within the plane of the device, and the second allows the field to be rotated
from in-plane to perpendicular to the device plane. An integrated angle sensor
coupled with a closed-loop feedback system allows the device orientation to be
known to within +/-0.03deg whilst maintaining the sample temperature below
100mK.Comment: 8 pages, 5 figure
Enhancement of Transition Temperature in FexSe0.5Te0.5 Film via Iron Vacancies
The effects of iron deficiency in FexSe0.5Te0.5 thin films (0.8<x<1) on
superconductivity and electronic properties have been studied. A significant
enhancement of the superconducting transition temperature (TC) up to 21K was
observed in the most Fe deficient film (x=0.8). Based on the observed and
simulated structural variation results, there is a high possibility that Fe
vacancies can be formed in the FexSe0.5Te0.5 films. The enhancement of TC shows
a strong relationship with the lattice strain effect induced by Fe vacancies.
Importantly, the presence of Fe vacancies alters the charge carrier population
by introducing electron charge carriers, with the Fe deficient film showing
more metallic behavior than the defect-free film. Our study provides a means to
enhance the superconductivity and tune the charge carriers via Fe vacancy, with
no reliance on chemical doping.Comment: 15 pages, 4 figure
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Buried-channel semiconductor heterostructures are an archetype material
platform to fabricate gated semiconductor quantum devices. Sharp confinement
potential is obtained by positioning the channel near the surface, however
nearby surface states degrade the electrical properties of the starting
material. In this paper we demonstrate a two-dimensional hole gas of high
mobility ( cm/Vs) in a very shallow strained germanium
channel, which is located only 22 nm below the surface. This high mobility
leads to mean free paths , setting new benchmarks for holes in
shallow FET devices. Carriers are confined in an undoped Ge/SiGe
heterostructure with reduced background contamination, sharp interfaces, and
high uniformity. The top-gate of a dopant-less field effect transistor controls
the carrier density in the channel. The high mobility, along with a percolation
density of , light effective mass (0.09
m), and high g-factor (up to ) highlight the potential of undoped
Ge/SiGe as a low-disorder material platform for hybrid quantum technologies
A framework for the successful implementation of food traceability systems in China
Implementation of food traceability systems in China faces many challenges due to the scale, diversity and complexity of China’s food supply chains. This study aims to identify critical success factors specific to the implementation of traceability systems in China. Twenty-seven critical success factors were identified in the literature. Interviews with managers at four food enterprises in a pre-study helped identify success criteria
and five additional critical success factors. These critical success factors were tested through a survey of managers in eighty-three food companies. This study identifies six dimensions for critical success factors: laws, regulations and standards; government support; consumer knowledge and support; effective management and communication; top management and vendor support; and information and system quality
Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices
Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective
components for spintronic applications and are of fundamental interest in the
study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report
on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron
density and confinement in QPCs with two different top-gate architectures. We
obtain g* values up to 2.8 for the lowest 1D subband, significantly exceeding
previous in-plane g-factor values in AlGaAs/GaAs QPCs, and approaching that in
InGaAs/InP QPCs. We show that g* is highly sensitive to confinement potential,
particularly for the lowest 1D subband. This suggests careful management of the
QPC's confinement potential may enable the high g* desirable for spintronic
applications without resorting to narrow-gap materials such as InAs or InSb.
The 0.7 anomaly and zero-bias peak are also highly sensitive to confining
potential, explaining the conflicting density dependencies of the 0.7 anomaly
in the literature.Comment: 23 pages, 7 figure
Graphene doping to enhance flux pinning and supercurrent carrying ability in magnesium diboride superconductor
It has been shown that graphene doping is sufficient to lead to an
improvement in the critical current density - field performance (Jc(B)), with
little change in the transition temperature in MgB2. At 3.7 at% graphene doping
of MgB2 an optimal enhancement in Jc(B) was reached by a factor of 30 at 5 K
and 10 T, compared to the un-doped sample. The results suggested that effective
carbon substitutions by grapheme, 2D nature of grapheme and the strain effect
induced by difference thermal coefficient between single grapheme sheet and
MgB2 superconductor may play an important role in flux pinning enhancement
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