Habitat Effects on the Occurrence of Parasites Inhabiting the Sergeant Major, Abudefduf saxatilis (Linnealus), with a List of Parasites of Caribbean Damselfishes

In June 1976 the parasitic faunas of sergeant majors, Abudefduf saxatilis, from a coral reef habitat near Akumal, Quintana Roo, Mexico and from an estuarine habitat in the adjacent caleta at Yalku were compared. The frequencies of occurrence of the nematode Spirocamallanus, the hemiurid trematode Genolinea the haplosplanchnid trematode Schikhobalotrema, and the copepod Holobomolochus nothrus, were dependent on collection locality. The residency of the damselfish in habitats with radically different salinity regimes, as well as the associated biotic communities within these habitats, are suspected causes of the observed differences

Opposing roles of Nfkb2 gene products p100 and p52 in the regulation of breast cancer stem cells

Purpose: Nuclear factor-kappa B (NF-κB) signalling has been shown to regulate properties of breast cancer stem cells. However, the specific contribution of the non-canonical NF-κB pathway, components of which are elevated in aggressive breast cancer has not been addressed. Methods: Through shRNA silencing of the Nfkb2 gene, the role of p100/p52 in 4T1 and N202.1A cell lines were assessed by NF-κB reporter, invasion, tumoursphere and orthotopic transplantation assays. The processing of p100 into p52 was also inhibited with a p97 ATPase inhibitor, NMS-873, and its effects on tumoursphere formation was assessed. Results: Knockdown of Nfkb2 led to opposing changes in NF-κB-dependent transcription. NF-κB activity was elevated in 4T1 cells and this resulted in increased motility, cancer stem cell (CSC) activity and tumourigenicity in vivo. Conversely, depletion of Nfkb2 in N202.1a cells decreased NF-κB activity, CSC properties and tumourigenicity in vivo. By selectively overexpressing the p52 subunit in Nfkb2 depleted cells, we found that the increased malignancy in 4T1 cells could not be reverted in the presence of p52, whereas the decreased tumourigenicity of N202.1a cells could be rescued by p52. These results indicate that p100 and its subunit p52 have opposing effects on breast CSC activity. Accordingly, inhibition of an upstream regulator of p100 processing was effective in reducing tumoursphere formation of N202.1A and SKBR3 (ErbB2 HIGH) cells without aggravating that of 4T1 and MDA-MB-231 (ErbB2LOW) cells. Conclusion: These findings indicate that inhibiting the processing of p100 may be a potential therapeutic strategy to suppress CSC activity in a subset of breast tumours. © 2017, Springer Science+Business Media New York

Cancer and Radiation Therapy: Current Advances and Future Directions

In recent years remarkable progress has been made towards the understanding of proposed hallmarks of cancer development and treatment. However with its increasing incidence, the clinical management of cancer continues to be a challenge for the 21st century. Treatment modalities comprise of radiation therapy, surgery, chemotherapy, immunotherapy and hormonal therapy. Radiation therapy remains an important component of cancer treatment with approximately 50% of all cancer patients receiving radiation therapy during their course of illness; it contributes towards 40% of curative treatment for cancer. The main goal of radiation therapy is to deprive cancer cells of their multiplication (cell division) potential. Celebrating a century of advances since Marie Curie won her second Nobel Prize for her research into radium, 2011 has been designated the Year of Radiation therapy in the UK. Over the last 100 years, ongoing advances in the techniques of radiation treatment and progress made in understanding the biology of cancer cell responses to radiation will endeavor to increase the survival and reduce treatment side effects for cancer patients. In this review, principles, application and advances in radiation therapy with their biological end points are discussed

Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySn y/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySny might take place at much lower Sn contents than the theory predicts, suggesting that these Ge1-ySny could become very promising direct bandgap semiconductors

Observation of Heavy- and Light-hole Split Direct Bandgap Photoluminescence from Tensile-strained GeSn (0.03% Sn)

Temperature- (T-) and laser power-dependent photoluminescence (PL) measurements have been made for the tensile-strained, undoped GeSn (0.03% Sn) film grown on Si substrate. The PL results show not only clear strain-split direct bandgap transitions to the light-hole (LH) and heavy-hole (HH) bands at energies of 0.827 and 0.851 eV at 10 K, respectively, but also clearly show both strong direct and indirect bandgap related PL emissions at almost all temperatures, which are rarely observed. This split of PL emissions can be directly observed only at low T and moderate laser power, and the two PL peaks merge into one broad PL peak at room temperature, which is mainly due to the HH PL emission rather than LH transition. The evolution of T-dependent PL results also clearly show the competitive nature between the direct and indirect bandgap related PL transitions as T changes. The PL analysis also indicates that the energy gap reduction in Γ valley could be larger, whereas the bandgap reduction in L valley could be smaller than the theory predicted. As a result, the separation energy between Γ and L valleys (∼86 meV at 300 K) is smaller than theory predicted (125 meV) for this Ge-like sample, which is mainly due to the tensile strain. This finding strongly suggests that the indirect-to-direct bandgap transition of Ge1−ySny could be achieved at much lower Sn concentration than originally anticipated if one utilizes the tensile strain properly. Thus, Ge1−ySny alloys could be attractive materials for the fabrication of direct bandgap Si-based light emitting devices

Complementary Metal-oxide Semiconductor-compatible Detector Materials with Enhanced 1550 nm Responsivity via Sn-doping of Ge/Si(100)

Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same responsivity via tensile strain in pure Ge on Si. A detailed study of a detector based on a Sn-doped Ge layer with 0.25% (1.1 × 1020 cm−3) Sn range demonstrates the responsivity enhancement and shows much better I-V characteristics than previously fabricated detectors based on Ge1−ySny alloys with y = 0.02

Degenerate Parallel Conducting Layer and Conductivity Type Conversion Observed from \u3ci\u3ep\u3c/i\u3e-Ge\u3csub\u3e1 - y\u3c/sub\u3eSn\u3csub\u3ey\u3c/sub\u3e (y = 0.06%) Grown on \u3ci\u3en\u3c/i\u3e-Si Substrate

Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1−ySny layer alone

Colorectal cancer screening: Barriers to the faecal occult blood test (FOBT) and colonoscopy in Singapore

Introduction: This study aims to identify the barriers to adopting faecal occult blood test (FOBT) and colonoscopy as colorectal cancer (CRC) screening methods among the eligible target population of Singapore. Materials and methods: This study was previously part of a randomised controlled trial reported elsewhere. Data was collected from Singapore residents aged 50 and above, via a household sample survey. The study recruited subjects who were aware of CRC screening methods, and interviewed them about the barriers to screening that they faced. Collected results on barriers to each screening method were analysed separately. Results: Out of the 343 subjects, 85 (24.8%) recruited knew about FOBT and/or colonoscopy. Most of the respondents (48.9%) cited not having symptoms as the reason for not using the FOBT. This is followed by inconvenience (31.1%), not having any family history of colon cancer (28.9%), lack of time (28.9%) and lack of reminders/recommendation (28.9%). Of the respondents who indicated not choosing colonoscopy as a screening method, more than one-half (54.8%) identified not having any symptoms as the main barrier for them, followed by not having any family history (38.7%) and having a healthy/low-risk lifestyle (29.0%). There was no difference between the reported barriers to each of the screening methods and the respondents\u27 dwelling types. Conclusions: Lack of knowledge, particularly the misconceptions of not having symptoms and being healthy, were identified as the main barriers to FOBT and colonoscopy as screening methods. Interventions to increase the uptake of CRC screening in this population should be tailored to address this misconception

Tumor Necrosis Factor Receptor Superfamily, Member 1B Haplotypes Increase or Decrease the Risk of Inflammatory Bowel Diseases in a New Zealand Caucasian Population

Inflammatory bowel diseases (IBDs) comprising Crohn disease (CD) and ulcerative colitis (UC) are chronic inflammatory conditions with polygenic susceptibility. Interactions between TNF-alpha and TNF-alpha receptor play a fundamental role in inflammatory response. This study investigates the role that selected single nucleotide polymorphisms (SNPs) and haplotypes in the TNF-alpha receptor (TNSFRSF1B) gene play in the risk of IBD in a New Zealand Caucasian population. DNA samples from 388 CD, 405 UC, 27 indeterminate colitis patients, and 293 randomly selected controls, from Canterbury, New Zealand were screened for 3 common SNPs in TNSFRSF1B: rs1061622 (c.676T > C), rs1061624 (c.*1663A > G), and rs3397 (c.*1690T > C), using TaqMan technologies. Carrying the rs1061624 variant decreased the risk of UC in the left colon (OR 0.73, 95% CI = 0.54–1.00) and of being a smoker at diagnosis (OR 0.62; 95% CI = 0.40–0.96). Carrying the rs3397 variant decreased the risk of penetrating CD (OR 0.62, 95% CI = 0.40–0.95). Three marker haplotype analyses revealed highly significant differences between CD patients and control subjects (χ2 = 29.9, df = 7, P = .0001) and UC cases and controls (χ2 = 46.3, df = 7, P < .0001). We conclude that carrying a 3-marker haplotype in the TNSFRSF1B gene may increase (e.g., haplotype of GGC was 2.9-fold more in the CD or UCpatients) or decrease (e.g., TGT was 0.47-fold less in UC patients) the risk of IBD in a New Zealand Caucasian population