Memory and subjective workload assessment

Recent research suggested subjective introspection of workload is not based upon specific retrieval of information from long term memory, and only reflects the average workload that is imposed upon the human operator by a particular task. These findings are based upon global ratings of workload for the overall task, suggesting that subjective ratings are limited in ability to retrieve specific details of a task from long term memory. To clarify the limits memory imposes on subjective workload assessment, the difficulty of task segments was varied and the workload of specified segments was retrospectively rated. The ratings were retrospectively collected on the manipulations of three levels of segment difficulty. Subjects were assigned to one of two memory groups. In the Before group, subjects knew before performing a block of trials which segment to rate. In the After group, subjects did not know which segment to rate until after performing the block of trials. The subjective ratings, RTs (reaction times) and MTs (movement times) were compared within group, and between group differences. Performance measures and subjective evaluations of workload reflected the experimental manipulations. Subjects were sensitive to different difficulty levels, and recalled the average workload of task components. Cueing did not appear to help recall, and memory group differences possibly reflected variations in the groups of subjects, or an additional memory task

The vibrational predissociation spectroscopy of hydrogen cluster ions

The first infrared spectra of protonated hydrogen clusters in the gas phase have been observed. Predissociation spectra were taken with a tandem mass spectrometer: mass selected hydrogen cluster ions were irradiated inside a rf ion trap by a tunable infrared laser, and the fragment ions created by photodissociation of the clusters were mass selected and detected. Spectra for each product channel were measured by counting fragment ions as a function of laser frequency. Low resolution spectra (Deltanu=10 cm^−1) in the region from 3800 to 4200 cm^−1 were observed for the ions H + 5, H + 7, and H + 9 at 3910, 3980, and 4020 cm−1, respectively. A band was also observed for H + 5 at 3532 cm^−1. No rotational structure was resolved. The frequencies of the band maxima agree well with the frequencies predicted by previous ab initio calculations for the highest modes

Infrared spectra of the cluster ions H7O⁺₃·H2 and H9O⁺₄·H2

Infrared spectra of hydrated hydronium ions weakly bound to an H2 molecule, specifically H7O + 3 ·H2 and H9O + 4 ·H2, have been observed. Mass-selected parent ions, trapped in a radio frequency ion trap, are excited by a tunable infrared laser; following absorption, the complex predissociates with loss of the H2, and the resulting fragment ions are detected. Spectra have been taken from 3000 to 4000 cm^−1, with a resolution of 1.2 cm^−1. They are compared to recent theoretical and experimental spectra of the hydronium ion hydrates alone. Binding an H2 molecule to these clusters should only weakly perturb their vibrations; if so, our spectra should be similar to spectra of the hydrated hydronium ions H7O + 3 and H9O + 4

Interfacial strain in AlxGa1–xAs layers on GaAs

Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices

Pattern Competition in the Photorefractive Semiconductors

We analytically study the photorefractive Gunn effect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by $I_0$, is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When $I_0$ is large, the space-charge field induced by the MIP will compete with the PDT and result in complex dynamics, including driven chaos via quasiperiodic route

Optical Properties of Composites of Selected Shades

The optical properties of seven shades of a conventional composite and five shades of a microfilled composite were determined from reflection spectrophotometric data with Kubelka's equations. Scattering and absorption coefficients decreased and values of infinite optical thickness increased as wavelength increased from 405 to 700 nm. Reflectivity curves were determined.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/66487/2/10.1177_00220345820610062901.pd

Infrared spectroscopy of the cluster ions H⁺₃·(H2)n

The vibrational spectra of the clusters H + 3(H2)n were observed near 4000 cm−1 by vibrational predissociation spectroscopy. Spectra of mass-selected clusters were obtained by trapping the ions in a radio frequency ion trap, exciting vibrational transitions of the cluster ions to predissociating levels, and detecting the fragment ions with a mass spectrometer. Low resolution bands of the solvent H2 stretches were observed for the clusters of one to six H2 coordinated to an H + 3 ion. The red shift of these vibrations relative to the monomer H2 frequency supported the model of H + 9 as an H + 3 with a complete inner solvation shell of three H2, one bound to each corner of the ion. Two additional bands of H + 5 were observed, one assigned as the H + 3 symmetric stretch, and the other as a combination or overtone band. High-resolution scans (0.5 and 0.08 cm−1) of H + n, n=5, 7, and 9 yielded no observable rotational structure, a result of either spectral congestion or rapid cluster dissociation. The band contour of the H + 5 band changed upon cooling the internal degrees of freedom, but the peaks remained featureless. The observed frequencies of H + 7 and H + 9 agreed well with ab initio predictions, but those of H + 5 did not. This deviation is discussed in terms of the large expected anharmonicity of the proton bound dimer H + 5

The lifetimes for spontaneous emission from the X 3Sigma−(v=1) and a 1Delta states of CH−

The radiative decay of excited CH− trapped in a radio frequency ion trap was measured, and the total excited state population was probed by observing the depletion of trapped CH− caused by photodetachment at 1.16 eV, below the expected electron affinity for the ground 3Sigma− state. The signal decayed biexponentially with time. We assigned the long lived state (lifetime 5.9+0.8, −0.6 s) as the metastable a 1Delta state previously identified in the photoelectron spectrum. The fast decay, with a lifetime of 1.75±0.15 ms, was attributed to the first excited vibrational level of the ground 3Sigma− state, in good agreement with a theoretical result by Manz, Zilch, Rosmus, and Werner. These results support the electron affinity of 1.238 eV for CH− obtained by Kasdan, Herbst, and Lineberger from photoelectron spectroscopy, and contradict the value of 0.74 eV determined by Feldmann from photodetachment spectroscopy

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed