Reply to “Comment on ‘Microwave vortex dissipation of superconducting Nd-Ce-Cu-O epitaxial films in high magnetic fields’”

We demonstrate with detailed analysis that the criticisms in the preceding Comment by Blackstead are largely due to insufficient understanding of the experimental issues associated with our system or the imposition of formalism that is inapplicable to our experiments. In particular, we distinguish the conventional formalism for “field-defined” surface resistance applicable to measurements on samples with filling factors i.e., the ratio of the sample volume to that of the microwave cavity approaching 1 from our “dissipation-defined” surface resistance derived from first principles for measurements on samples with very small filling factors

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer

High Dynamic Range RF Front End with Noise Cancellation and Linearization for WiMAX Receivers

This research deals with verification of the high dynamic range for a heterodyne radio frequency (RF) front end. A 2.6 GHz RF front end is designed and implemented in a hybrid microwave integrated circuit (HMIC) for worldwide interoperability for microwave access (WiMAX) receivers. The heterodyne RF front end consists of a low-noise amplifier (LNA) with noise cancellation, an RF bandpass filter (BPF), a downconverter with linearization, and an intermediate frequency (IF) BPF. A noise canceling technique used in the low-noise amplifier eliminates a thermal noise and then reduces the noise figure (NF) of the RF front end by 0.9 dB. Use of a downconverter with diode linearizer also compensates for gain compression, which increases the input-referred third-order intercept point (IIP3) of the RF front end by 4.3 dB. The proposed method substantially increases the spurious-free dynamic range (DRf) of the RF front end by 3.5 dB

Laser action generated within a light pipe: A concept

Laser light could be generated within light pipe itself, thereby eliminating coupling losses. Theoretical calculations have shown feasibility of light-pipe laser propagating in circularly-polarized TE mode. It is predicted that fiber-optic distributed-feedback laser would have gain on order of 25 dB

Schottky barrier solar cell

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer

A study of topologies and protocols for fiber optic local area network

The emergence of new applications requiring high data traffic necessitates the development of high speed local area networks. Optical fiber is selected as the transmission medium due to its inherent advantages over other possible media and the dual optical bus architecture is shown to be the most suitable topology. Asynchronous access protocols, including token, random, hybrid random/token, and virtual token schemes, are developed and analyzed. Exact expressions for insertion delay and utilization at light and heavy load are derived, and intermediate load behavior is investigated by simulation. A new tokenless adaptive scheme whose control depends only on the detection of activity on the channel is shown to outperform round-robin schemes under uneven loads and multipacket traffic and to perform optimally at light load. An approximate solution to the queueing delay for an oscillating polling scheme under chaining is obtained and results are compared with simulation. Solutions to the problem of building systems with a large number of stations are presented, including maximization of the number of optical couplers, and the use of passive star/bus topologies, bridges and gateways

Vortex pinning by cylindrical defects in type-II superconductors: Numerical solutions to the Ginzburg-Landau equations

We numerically integrate the one-dimensional, cylindrically symmetric Ginzburg-Landau equations to calculate the spatial variation of the order parameter and supercurrents for a vortex trapped by a cylindrical defect. We use the resulting field distributions to estimate the pinning energy, and make use of the vortex/two-dimensional boson analogy to calculate the depinning temperature. The microscopic behavior oi the fields depends on the size, and the conductivity of the cylindrical defect appears to be important for the pinning

Interfacial strain in AlxGa1–xAs layers on GaAs

Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices