Theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band.

Presents the results of theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for the final cascades of power amplifiers, radio transmitting devices

Theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone

The results of theoretical research and computer simulation of composite transistors made of a semiconductor material with different width of forbidden zone are presented in the article. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for output stages of power amplifiers, radio transmitting devices, electronic equipment for industrial and automotive electronics

EXPERIMENTAL RESEARCH AND COMPUTER SIMULATION OF MULTI-CASCADE COMPOSITE TRANSISTORS FOR STABILIZING THE OPERATING MODE OF OUTPUT CASCADES OF RADIO ENGINEERING DEVICES

Experimental results and computer simulation of multi-stage composite transistors are presented. To study the volt - ampere characteristics of multistage composite transistors, a dialogue computer simulation program, the Delphi programming environment, has been developed. It is shown that the proposed multistage composite transistors can improve manufacturability in its industrial production. It is shown that multistage homostructure transistors according to the Darlington and Shiklai circuits operate stably at collector-emitter voltages five times higher than in the case of individual transistors. The power dissipated on the collector is 3 times higher than the rated value of the maximum permissible power of the composite transistors. It is established that the efficiency of the method of stabilizing the emitter current of a three-link homostructure transistor is 7 times higher in voltage and three orders of magnitude higher in temperature compared to a conventional composite transistor. The proposed homostructure transistors are designed to operate in terminal stages of power amplifiers, radio transmitting devices, electronic equipment of industrial and automotive electronics