Presents the results of theoretical research and computer simulation of composite transistors made of a semiconductor material with the same of the forbidden band. To study the volt-ampere characteristics of such composite transistors, an interactive computer simulation program was developed in the programming environment of Delphi-6. It is shown that the proposed transistors make it possible to improve manufacturability when it is manufactured industrially. The proposed composite transistors are designed for the final cascades of power amplifiers, radio transmitting devices
