Comparison of Electronic Parameters of Low Voltage Organic Field-Effect Transistors with Novel Gel Gate Insulators

WOS: 000469369800012In this paper, regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT)-based low voltage organic field-effect transistors (OFETs) with three kinds of non-ionic gel gate insulators (NIGIs) were fabricated and compared in terms of their electronic properties. One of the NIGI was prepared by mixing solution-processed poly(methyl acrylate) (PMA) with propylene carbonate (PC) until it becoming a gel state and same procedure was applied to the solution-processed copolymers of PMA called as P18 and P28. As a result, it was seen that fabricated OFETs could be operated at low voltages which is very significant property in order to manipulate the devices in low power electronic applications. On the other hand, it was noted that mobilities of the transistors were enhanced by reducing the effective capacitance (EC) of the NIGIs. This could be attributed to less charge carrier self-localization formation between the insulator-semiconductor interface when the EC was decreased. Furthermore, devices showed similar on-to-off current (I-ON/I-OFF) ratio which was good for using them in inverter applications. Besides, subthreshold swing (SS) for the P18 non-ionic gel OFET (NIGOFET) was the highest probably due to the less water-repellent chemical structure of the P18 NIGI.Duzce University Scientific Research Projects unitDuzce University [2017.07.02.621, 2015.05.03.381]This study was presented in the 5th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG2018) which held between 4-6 October 2018 in Cappadocia Turkey. Furthermore, we appreciate the Duzce University Scientific Research Projects unit for providing us financial support under the Grant [2017.07.02.621] and [2015.05.03.381]