3D printing of oil paintings based on material jetting and its reduction of staircase effect

Material jetting is a high-precision and fast 3D printing technique for color 3D objects reproduction, but it also suffers from color accuracy and jagged issues. The UV inks jetting processes based on the polymer jetting principle have been studied from printing materials regarding the parameters in the default layer order, which is prone to staircase effects. In this work, utilizing the Mimaki UV inks jetting system with a variable layer thickness, a new framework to print a photogrammetry-based oil painting 3D model has been proposed with the tunable coloring layer sequence to improve the jagged challenge between adjacent layers. Based on contour tracking, a height-rendering image of the oil painting model is generated, which is further segmented and pasted to the corresponding slicing layers to control the overall printing sequence of coloring layers and white layers. The final results show that photogrammetric models of oil paintings can be printed vividly by UV-curable color polymers, and that the proposed reverse-sequence printing method can significantly improve the staircase effect based on visual assessment and color difference. Finally, the case of polymer-based oil painting 3D printing provides new insights for optimizing color 3D printing processes based on other substrates and print accuracy to improve the corresponding staircase effect

Chiral geometry of higher excited bands in triaxial nuclei with particle-hole configuration

The lowest six rotational bands have been studied in the particle-rotor model with the particle-hole configuration $\pi h^1_{11/2}\otimes\nu h^{-1}_{11/2}$ and different triaxiality parameter $\gamma$. Both constant and spin-dependent variable moments of inertial (CMI and VMI) are introduced. The energy spectra, electromagnetic transition probabilities, angular momentum components and $K$-distribution have been examined. It is shown that, besides the band 1 and band 2, the predicted band 3 and band 4 in the calculations of both CMI and VMI for atomic nuclei with $\gamma=30^\circ$ could be interpreted as chiral doublet bands.Comment: 4 pages, 4 figure

Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an electric-field tunable band gap. Such electronic structure is distinct from simple hexagonal stacking (AAA) or typical Bernal stacking (ABA), and is promising for nanoscale electronics, optoelectronics applications. So far clean experimental electronic spectra on the first two stackings are missing because the samples are usually too small in size (um or nm scale) to be resolved by conventional angle-resolved photoemission spectroscopy (ARPES). Here by using ARPES with nanospot beam size (NanoARPES), we provide direct experimental evidence for the coexistence of three different stackings of trilayer graphene and reveal their distinctive electronic structures directly. By fitting the experimental data, we provide important experimental band parameters for describing the electronic structure of trilayer graphene with different stackings

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices with an exposed SiOx edge. Electrical test of encapsulated, edge-free devices in 1 atmosphere air indicates stable switching characteristics, unlike devices with an edge. This work demonstrates that SiOx RRAM is able to operate in air with proper encapsulation and an edge-free structure. The resistive switching failure mechanism when operating in air is explained by the oxidation of hydrogen-complexed defects in the switching filament. (C) 2014 AIP Publishing LLC.National Science Foundation IIP-1127537Microelectronics Research Cente