Revealing the Biexciton and Trion-exciton Complexes in BN Encapsulated WSe2

Strong Coulomb interactions in single-layer transition metal dichalcogenides (TMDs) result in the emergence of strongly bound excitons, trions and biexcitons. These excitonic complexes possess the valley degree of freedom, which can be exploited for quantum optoelectronics. However, in contrast to the good understanding of the exciton and trion properties, the binding energy of the biexciton remains elusive, with theoretical calculations and experimental studies reporting discrepant results. In this work, we resolve the conflict by employing low-temperature photoluminescence spectroscopy to identify the biexciton state in BN encapsulated single-layer WSe2. The biexciton state only exists in charge neutral WSe2, which is realized through the control of efficient electrostatic gating. In the lightly electron-doped WSe2, one free electron binds to a biexciton and forms the trion-exciton complex. Improved understanding of the biexciton and trion-exciton complexes paves the way for exploiting the many-body physics in TMDs for novel optoelectronics applications

Defining Epidermal Basal Cell States during Skin Homeostasis and Wound Healing Using Single-Cell Transcriptomics.

Our knowledge of transcriptional heterogeneities in epithelial stem and progenitor cell compartments is limited. Epidermal basal cells sustain cutaneous tissue maintenance and drive wound healing. Previous studies have probed basal cell heterogeneity in stem and progenitor potential, but a comprehensive dissection of basal cell dynamics during differentiation is lacking. Using single-cell RNA sequencing coupled with RNAScope and fluorescence lifetime imaging, we identify three non-proliferative and one proliferative basal cell state in homeostatic skin that differ in metabolic preference and become spatially partitioned during wound re-epithelialization. Pseudotemporal trajectory and RNA velocity analyses predict a quasi-linear differentiation hierarchy where basal cells progress from Col17a1Hi/Trp63Hi state to early-response state, proliferate at the juncture of these two states, or become growth arrested before differentiating into spinous cells. Wound healing induces plasticity manifested by dynamic basal-spinous interconversions at multiple basal transcriptional states. Our study provides a systematic view of epidermal cellular dynamics, supporting a revised "hierarchical-lineage" model of homeostasis

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications

Magnetotransport properties of Cd3As2 nanostructures

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.Comment: 18 pages, 5 figure

Signal processing and generation of bioactive nitric oxide in a model prototissue

The design and construction of synthetic prototissues from integrated assemblies of artificial protocells is an important challenge for synthetic biology and bioengineering. Here we spatially segregate chemically communicating populations of enzyme-decorated phospholipid-enveloped polymer/DNA coacervate protocells in hydrogel modules to construct a tubular prototissue-like vessel capable of modulating the output of bioactive nitric oxide (NO). By decorating the protocells with glucose oxidase, horseradish peroxidase or catalase and arranging different modules concentrically, a glucose/hydroxyurea dual input leads to logic-gate signal processing under reaction-diffusion conditions, which results in a distinct NO output in the internal lumen of the model prototissue. The NO output is exploited to inhibit platelet activation and blood clot formation in samples of plasma and whole blood located in the internal channel of the device, thereby demonstrating proof-of-concept use of the prototissue-like vessel for anticoagulation applications. Our results highlight opportunities for the development of spatially organized synthetic prototissue modules from assemblages of artificial protocells and provide a step towards the organization of biochemical processes in integrated micro-compartmentalized media, micro-reactor technology and soft functional materials

Landau level splitting in Cd3As2 under high magnetic fields

Three-dimensional topological Dirac semimetals (TDSs) are a new kind of Dirac materials that exhibit linear energy dispersion in the bulk and can be viewed as three-dimensional graphene. It has been proposed that TDSs can be driven to other exotic phases like Weyl semimetals, topological insulators and topological superconductors by breaking certain symmetries. Here we report the first transport experiment on Landau level splitting in TDS Cd3As2 single crystals under high magnetic fields, suggesting the removal of spin degeneracy by breaking time reversal symmetry. The detected Berry phase develops an evident angular dependence and possesses a crossover from nontrivial to trivial state under high magnetic fields, a strong hint for a fierce competition between the orbit-coupled field strength and the field-generated mass term. Our results unveil the important role of symmetry breaking in TDSs and further demonstrate a feasible path to generate a Weyl semimetal phase by breaking time reversal symmetry.Comment: 31 page

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 {\mu}s and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices