429 research outputs found

    Nonlinear Adaptive Equivalent Control Based on Interconnection Subsystems for Air-Breathing Hypersonic Vehicles

    Get PDF
    For the nonminimum phase behavior of the air-breathing hypersonic vehicle model caused by elevator-to-lift coupling, a nonlinear adaptive equivalent control method based on interconnection subsystems is proposed. In the altitude loop, the backstepping strategy is applied, where the virtual control inputs about flight-path angle and attack angle are designed step by step. In order to avoid the inaccurately direct cancelation of elevator-to-lift coupling when aerodynamic parameters are uncertain, the real control inputs, that is, elevator deflection and canard deflection, are linearly converted into the equivalent control inputs which are designed independently. The reformulation of the altitude-flight-path angle dynamics and the attack angle-pitch rate dynamics is constructed into interconnection subsystems with input-to-state stability via small-gain theorem. For the velocity loop, the dynamic inversion controller is designed. The adaptive approach is used to identify the uncertain aerodynamic parameters. Simulation of the flexible hypersonic vehicle demonstrates effectiveness of the proposed method

    Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

    Full text link
    Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications

    Irradiation- Induced Extremes Create Hierarchical Face- /Body- Centered- Cubic Phases in Nanostructured High Entropy Alloys

    Full text link
    A nanoscale hierarchical dual- phase structure is reported to form in a nanocrystalline NiFeCoCrCu high- entropy- alloy (HEA) film via ion irradiation. Under the extreme energy deposition and consequent thermal energy dissipation induced by energetic particles, a fundamentally new phenomenon is revealed, in which the original single- phase face- centered- cubic (FCC) structure partially transforms into alternating nanometer layers of a body- centered- cubic (BCC) structure. The orientation relationship follows the Nishiyama- Wasser- man relationship, that is, (011)BCC || (- 1¯1¯1)FCC and [100]BCC || [- 11¯0]FCC. Simulation results indicate that Cr, as a BCC stabilizing element, exhibits a tendency to segregate to the stacking faults (SFs). Furthermore, the high densities of SFs and twin boundaries in each nanocrystalline grain serve to accelerate the nucleation and growth of the BCC phase during irradiation. By adjusting the irradiation parameters, desired thicknesses of the FCC and BCC phases in the laminates can be achieved. This work demonstrates the controlled formation of an attractive dual- phase nanolaminate structure under ion irradiation and provides a strategy for designing new derivate structures of HEAs.A nanoscale hierarchical dual- phase structure is reported to form in a nanocrystalline NiFeCoCrCu high- entropy- alloy film via ion- irradiation- induced face- centered- cubic to body- centered- cubic phase transformation. Both kinetic and thermodynamic conditions for the phase transformation are explored. The results provide a new strategy for tailoring material structures on the nanometer or sub- nanometer scales.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/162803/3/adma202002652_am.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/162803/2/adma202002652.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/162803/1/adma202002652-sup-0001-SuppMat.pd

    Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

    Full text link
    Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 {\mu}s and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices

    The MERS-CoV N Protein Regulates Host Cytokinesis and Protein Translation via Interaction With EF1A

    Get PDF
    Middle East respiratory syndrome coronavirus (MERS-CoV), a pathogen causing severe respiratory disease in humans that emerged in June 2012, is a novel beta coronavirus similar to severe acute respiratory syndrome coronavirus (SARS-CoV). In this study, immunoprecipitation and proximity ligation assays revealed that the nucleocapsid (N) protein of MERS-CoV interacted with human translation elongation factor 1A (EF1A), an essential component of the translation system with important roles in protein translation, cytokinesis, and filamentous actin (F-actin) bundling. The C-terminal motif (residues 359–363) of the N protein was the crucial domain involved in this interaction. The interaction between the MERS-CoV N protein and EF1A resulted in cytokinesis inhibition due to the formation of inactive F-actin bundles, as observed in an in vitro actin polymerization assay and in MERS-CoV-infected cells. Furthermore, the translation of a CoV-like reporter mRNA carrying the MERS-CoV 5′UTR was significantly potentiated by the N protein, indicating that a similar process may contribute to EF1A-associated viral protein translation. This study highlights the crucial role of EF1A in MERS-CoV infection and provides new insights into the pathogenesis of coronavirus infections
    corecore