2,622 research outputs found
Identification of candidate genes involved in wax deposition in Poa pratensis by RNA-seq
A, Randomness test of cDNA fragments; B, Sequencing saturation analysis. T1 and T2 represent NEZm; T3 and T4 represent EBZ. (PDF 290 kb
A Mode-Sum Prescription for Vacuum Polarization in Even Dimensions
We present a mode-sum regularization prescription for computing the vacuum
polarization of a scalar field in static spherically-symmetric black hole
spacetimes in even dimensions. This is the first general and systematic
approach to regularized vacuum polarization in higher even dimensions, building
upon a previous scheme we developed for odd dimensions. Things are more
complicated here since the even-dimensional propagator possesses logarithmic
singularities which must be regularized. However, in spite of this
complication, the regularization parameters can be computed in closed form in
arbitrary even dimensions and for arbitrary metric function . As an
explicit example of our method, we show plots for vacuum polarization of a
massless scalar field in the Schwarzschild-Tangherlini spacetime for even
. However, the method presented applies straightforwardly to
massive fields or to nonvacuum spacetimes.Comment: arXiv admin note: text overlap with arXiv:1609.0816
Maximum Energy Subsampling: A General Scheme For Multi-resolution Image Representation And Analysis
Image descriptors play an important role in image representation and analysis. Multi-resolution image descriptors can effectively characterize complex images and extract their hidden information.
Wavelets descriptors have been widely used in multi-resolution image analysis. However, making the wavelets transform shift and rotation invariant produces redundancy and requires complex matching processes. As to other multi-resolution descriptors, they usually depend on other theories or information, such as filtering function, prior-domain knowledge, etc.; that not only increases the computation complexity, but also generates errors.
We propose a novel multi-resolution scheme that is capable of transforming any kind of image descriptor into its multi-resolution structure with high computation accuracy and efficiency. Our multi-resolution scheme is based on sub-sampling an image into an odd-even image tree. Through applying image descriptors to the odd-even image tree, we get the relative multi-resolution image descriptors. Multi-resolution analysis is based on downsampling expansion with maximum energy extraction followed by upsampling reconstruction. Since the maximum energy usually retained in the lowest frequency coefficients; we do maximum energy extraction through keeping the lowest coefficients from each resolution level.
Our multi-resolution scheme can analyze images recursively and effectively without introducing artifacts or changes to the original images, produce multi-resolution representations, obtain higher resolution images only using information from lower resolutions, compress data, filter noise, extract effective image features and be implemented in parallel processing
Characteristics of volatile compound emission and odor pollution from municipal solid waste treating/disposal facilities of a city in Eastern China
Transgenic studies reveal the positive role of LeEIL-1 in regulating shikonin biosynthesis in Lithospermum erythrorhizon hairy roots
Time-course accumulation of shikonin in four typical hairy root lines. Value of Ei-19 or EO-13 is significantly different from that of the control line WT-1 or EV-9 at each time point from 3 to 12 days, respectively (Student’s t-test, P < 0.05). (TIF 125 kb
Carbon segregation at Σ3 {112} grain boundaries in silicon
First-principles calculations were carried out to systematically investigate the carbon segregation along Σ3 {1 1 2} grain boundaries (GBs) in silicon. The energetically favorable segregation sites and corresponding segregation energy at two types of Σ3 {1 1 2} GBs, i.e. symmetric and asymmetric Σ3 {1 1 2}, were determined. A site-selective carbon segregation behavior along these two GBs was revealed, and a maximum segregation energy of −0.418 eV/atom and −0.525 eV/atom was predicted for the symmetric and asymmetric Σ3 {1 1 2} GBs, respectively. It is found that the segregation energy is linearly correlated with the average bond length (ABL) of carbon atoms segregating at the core sites in these two GBs instead of the ABL of core Si sites in the pristine Σ3 {1 1 2} GBs. Such a correlation is primarily attributed to the bonding energy effect caused by the substitution of carbon atom at the Σ3 {1 1 2} GBs, as well as the structural reconstructions of GBs along the [1 View the MathML source 0] direction. This work provides, at the atomic level, a fundamental theoretical understanding on the carbon segregation behavior at Σ3 {1 1 2} GBs in Si.acceptedVersion© 2017. This is the authors’ accepted and refereed manuscript to the article. LOCKED until 10.11.2019 due to copyright restrictions. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0
Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles
Phosphorous (P) and arsenic (As) segregation at grain boundaries (GBs) usually deteriorate the electrical performance of n-type doped Si-wafers. In order to probe the factors influencing P and As segregation behaviors along Si GBs, a systematic investigation upon the interactions between P, As atoms and a series of coincidence site lattice Si GBs, including Σ3 {111}, Σ9 {221}, Σ27 {552}, Σ3 {112}, was carried out via first-principles calculations. It is revealed that the segregation behaviors of P, As along different GBs are different, which is dependent on both GB characteristics, i.e. the intrinsic lattice distortion, number of dangling/extra bonds, deep levels in the bandgap of density of states, and also the impurity properties. It reveals that smaller P atoms tend to segregate to the compressed atomic sites in GBs, by which the intrinsic GB lattice distortion is reduced. However, GB lattice distortion hardly induce As segregation owing to the similar atomic size between As and Si atoms. Calculations also indicate that under-coordinated core sites with dangling bond along GBs are remarkably attractive for P and As segregation, as a result of the nature of group-V elements to be three-coordinated rather than four-coordinated. Furthermore, GBs having deep levels in the bandgap of density of states, produced either by dangling or extra bonds, show a strikingly high attractive strength for both P and As segregation. The present work is supposed to provide important insights on substitutional impurity segregation along GBs in multi-crystalline Si in the atomic and electronic level.acceptedVersio
Uncertain Attribute Graph Sub-Graph Isomorphism and its Determination Algorithm
The expectative sub-graph isomorphism of uncertain attribute graph is based on the analysis of complex network structure and the characteristic of uncertain attribute graph. The expectative sub-graph isomorphism of uncertain attribute graph is only one threshold value as constraint conditions. The method is simple, but the computation is large amount. Therefore, this paper brings in the definition of sub-graph isomorphism of uncertain attribute graph, and explains the concept. Then, this paper designs and comes true the algorithm ofsub-graph isomorphism. Finally, through the experiments proves that sub-graph isomorphic is better than expectative sub-graph, and it analyzes the variation in the different threshold cases. The research of sub-graph isomorphism algorithm laid the foundation for uncertain attribute graph sub-graph query and community mining. DOI : http://dx.doi.org/10.11591/telkomnika.v12i4.4774
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