168,154 research outputs found

    High performance III-V MOSFETs: a dream close to reality?

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    We have studied the performance potential of sub 100 nm compound MOSFETs with InGaAs channel and high-k gate insulator, using ensemble Monte Carlo simulations. The results show that such devices could deliver 200-300% increase in the drive current compared to conventional MOSFETs with analogous channel lengths and device structure. This improvement is much higher than the 20-30% drive current increase in similar devices with strained Si channels on virtual SiGe substrates. As a viable solutions to the constant drive current bottleneck anticipated in the International Roadmap for Semiconductors for the next generations of Si MOSFETs it advocates further research in respect of the manufacturability of compound MOSFETs

    Ultimate limits to inertial mass sensing based upon nanoelectromechanical systems

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    Nanomechanical resonators can now be realized that achieve fundamental resonance frequencies exceeding 1 GHz, with quality factors (Q) in the range 10^3<=Q<=10^5. The minuscule active masses of these devices, in conjunction with their high Qs, translate into unprecedented inertial mass sensitivities. This makes them natural candidates for a variety of mass sensing applications. Here we evaluate the ultimate mass sensitivity limits for nanomechanical resonators operating in vacuo that are imposed by a number of fundamental physical noise processes. Our analyses indicate that nanomechanical resonators offer immense potential for mass sensing—ultimately with resolution at the level of individual molecules

    Tests of Functional Form and Heteroscedasticity

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    This paper considers tests of misspecification in a heteroscedastic transformation model. We derive Lagrange multiplier (LM) statistics for (i) testing functional form and heteroscedasticity jointly, (ii) testing functional form in the presence of heteroscedasticity, and (iii) testing heteroscedasticity in the presence of data transformation. We present LM statistics based on the expected information matrix. For cases (i) and (ii), this is done assuming the Box-Cox transformation. For case (iii), the test does not depend on whether the functional form is estimated or pre-specified. Small-sample properties of the tests are assessed by Monte Carlo simulation, and comparisons are made with the likelihood ratio test and other versions of LM test. The results show that the expected-information based LM test has the most appropriate finite-sample empirical sizeFunctional Form, Heterscedasticity, Lagrange Multiplier Test

    Tests of Functional Form and Heteroscedasticity

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    This paper considers tests of misspecification in a heteroscedastic transformation model. We derive Lagrange multiplier (LM) statistics for (i) testing functional form and heteroscedasticity jointly, (ii) testing functional form in the presence of heteroscedasticity, and (iii) testing heteroscedasticity in the presence of data transformation. We present LM statistics based on the expected information matrix. For cases (i) and (ii), this is done assuming the Box-Cox transformation. For case (iii), the test does not depend on whether the functional form is estimated or pre-specified. Small-sample properties of the tests are assessed by Monte Carlo simulation, and comparisons are made with the likelihood ratio test and other versions of LM test. The results show that the expected-information based LM test has the most appropriate finite-sample empirical siFunctional Form, Hetersocedasticity, Lagrange Multiplier Test

    Electron yields from spacecraft materials

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    Photoyields and secondary electron emission (SEE) characteristics were determined under UHV conditions for a group of insulating materials used in spacecraft applications. The SEE studies were carried out with a pulsed primary beam while photoyields were obtained with a chopped photon beam from a Kr resonance source with major emission at 123.6 nm. This provides a photon flux close to that of the Lyman alpha in the space environment. Yields per incident photon are obtained relative to those from a freshly evaporated and air oxidized Al surface. Results are presented for Kapton, FEP Teflon, the borosilicate glass covering of a shuttle tile, and spacesuit outer fabric

    Spin mapping, phase diagram, and collective modes in double layer quantum Hall systems at ν=2\nu=2

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    An exact spin mapping is identified to simplify the recently proposed hard-core boson description (Demler and Das Sarma, Phys. Rev. Lett., to be published) of the bilayer quantum Hall system at filling factor 2. The effective spin model describes an easy-plane ferromagnet subject to an external Zeeman field. The phase diagram of this effective model is determined exactly and found to agree with the approximate calculation of Demler and Das Sarma, while the Goldstone-mode spectrum, order parameter stiffness and Kosterlitz-Thouless temperature in the canted antiferromagnetic phase are computed approximately.Comment: 4 pages with 2 figures include
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