4,287 research outputs found

    Numerical Test of Disk Trial Wave function for Half-Filled Landau Level

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    The analyticity of the lowest Landau level wave functions and the relation between filling factor and the total angular momentum severely limits the possible forms of trial wave functions of a disk of electrons subject to a strong perpendicular magnetic field. For N, the number of electrons, up to 12 we have tested these disk trial wave functions for the half filled Landau level using Monte Carlo and exact diagonalization methods. The agreement between the results for the occupation numbers and ground state energies obtained from these two methods is excellent. We have also compared the profile of the occupation number near the edge with that obtained from a field-theoretical method. The results give qualitatively identical edge profiles. Experimental consequences are briefly discussed.Comment: To be published in Phys. Rev. B. 9 pages, 6 figure

    Edge of a Half-Filled Landau Level

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    We have investigated the electron occupation number of the edge of a quantum Hall (QH) droplet at ν=1/2\nu=1/2 using exact diagonalization technique and composite fermion trial wavefunction. We find that the electron occupation numbers near the edge obey a scaling behavior. The scaling result indicates the existence of a well-defined edge corresponding to the radius of a compact droplet of uniform filling factor 1/2. We find that the occupation number beyond this edge point is substantial, which is qualitatively different from the case of odd-denominator QH states. We relate these features to the different ways in which composite fermions occupy Landau levels for odd and even denominator states.Comment: To appear in Phys. Rev.

    Strongly correlated quantum dots in weak confinement potentials and magnetic fields

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    We explore a strongly correlated quantum dot in the presence of a weak confinement potential and a weak magnetic field. Our exact diagonalization studies show that the groundstate property of such a quantum dot is rather sensitive to the magnetic field and the strength of the confinement potential. We have determined rich phase diagrams of these quantum dots. Some experimental consequences of the obtained phase diagrams are discussed.Comment: 5 pages, 7 figures, new and updated figure

    Tumor site immune markers associated with risk for subsequent basal cell carcinomas.

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    BackgroundBasal cell carcinoma (BCC) tumors are the most common skin cancer and are highly immunogenic.ObjectiveThe goal of this study was to assess how immune-cell related gene expression in an initial BCC tumor biopsy was related to the appearance of subsequent BCC tumors.Materials and methodsLevels of mRNA for CD3ε (a T-cell receptor marker), CD25 (the alpha chain of the interleukin (IL)-2 receptor expressed on activated T-cells and B-cells), CD68 (a marker for monocytes/macrophages), the cell surface glycoprotein intercellular adhesion molecule-1 (ICAM-1), the cytokine interferon-γ (IFN-γ) and the anti-inflammatory cytokine IL-10 were measured in BCC tumor biopsies from 138 patients using real-time PCR.ResultsThe median follow-up was 26.6 months, and 61% of subjects were free of new BCCs two years post-initial biopsy. Patients with low CD3ε CD25, CD68, and ICAM-1 mRNA levels had significantly shorter times before new tumors were detected (p = 0.03, p = 0.02, p = 0.003, and p = 0.08, respectively). Furthermore, older age diminished the association of mRNA levels with the appearance of subsequent tumors.ConclusionsOur results show that levels of CD3ε, CD25, CD68, and ICAM-1 mRNA in BCC biopsies may predict risk for new BCC tumors

    Interacting electrons in disordered potentials: Conductance versus persistent currents

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    An expression for the conductance of interacting electrons in the diffusive regime as a function of the ensemble averaged persistent current and the compressibility of the system is presented. This expression involves only ground-state properties of the system. The different dependencies of the conductance and persistent current on the electron-electron interaction strength becomes apparent. The conductance and persistent current of a small system of interacting electrons are calculated numerically and their variation with the strength of the interaction is compared. It is found that while the persistent current is enhanced by interactions, the conductance is suppressed.Comment: REVTeX, 4 pages, 3 figures, all uuencoded, accepted for publication in PR

    On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

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    We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.Comment: 10 pages, 12 figure

    Charge Fluctuations in Quantum Point Contacts and Chaotic Cavities in the Presence of Transport

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    We analyze the frequency-dependent current fluctuations induced into a gate near a quantum point contact or a quantum chaotic cavity. We use a current and charge conserving, effective scattering approach in which interactions are treated in random phase approximation. The current fluctuations measured at a nearby gate, coupled capacitively to the conductor, are determined by the screened charge fluctuations of the conductor. Both the equilibrium and the non-equilibrium current noise at the gate can be expressed with the help of resistances which are related to the charge dynamics on the conductor. We evaluate these resistances for a point contact and determine their distributions for an ensemble of chaotic cavities. For a quantum point contact these resistances exhibit pronounced oscillations with the opening of new channels. For a chaotic cavity coupled to one channel point contacts the charge relaxation resistance shows a broad distribution between 1/4 and 1/2 of a resistance quantum. The non-equilibrium resistance exhibits a broad distribution between zero and 1/4 of a resistance quantum.Comment: 9 pages, two-column Revtex, 6 figures include
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