103 research outputs found
Modeling of Dust Emission in Northwest China
Chinese Academy of SciencesPromoting Environmental Pesearch in Pan-Japan Sea Area : Young Researchers\u27 Network, Schedule: March 8-10,2006,Kanazawa Excel Hotel Tokyu, Japan, Organized by: Kanazawa University 21st-Century COE Program, Environmental Monitoring and Prediction of Long- & Short- Term Dynamics of Pan-Japan Sea Area ; IICRC(Ishikawa International Cooperation Research Centre), Sponsors : Japan Sea Research ; UNU-IAS(United Nations University Institute of Advanced Studies)+Ishikawa Prefecture Government ; City of Kanazaw
Assessment of Off-shore Wind Energy Resource in China using QuikSCAT Satellite data and SAR Satellite Images
Enhancing Fine-Tuning Based Backdoor Defense with Sharpness-Aware Minimization
Backdoor defense, which aims to detect or mitigate the effect of malicious
triggers introduced by attackers, is becoming increasingly critical for machine
learning security and integrity. Fine-tuning based on benign data is a natural
defense to erase the backdoor effect in a backdoored model. However, recent
studies show that, given limited benign data, vanilla fine-tuning has poor
defense performance. In this work, we provide a deep study of fine-tuning the
backdoored model from the neuron perspective and find that backdoorrelated
neurons fail to escape the local minimum in the fine-tuning process. Inspired
by observing that the backdoorrelated neurons often have larger norms, we
propose FTSAM, a novel backdoor defense paradigm that aims to shrink the norms
of backdoor-related neurons by incorporating sharpness-aware minimization with
fine-tuning. We demonstrate the effectiveness of our method on several
benchmark datasets and network architectures, where it achieves
state-of-the-art defense performance. Overall, our work provides a promising
avenue for improving the robustness of machine learning models against backdoor
attacks
Boosting Backdoor Attack with A Learnable Poisoning Sample Selection Strategy
Data-poisoning based backdoor attacks aim to insert backdoor into models by
manipulating training datasets without controlling the training process of the
target model. Existing attack methods mainly focus on designing triggers or
fusion strategies between triggers and benign samples. However, they often
randomly select samples to be poisoned, disregarding the varying importance of
each poisoning sample in terms of backdoor injection. A recent selection
strategy filters a fixed-size poisoning sample pool by recording forgetting
events, but it fails to consider the remaining samples outside the pool from a
global perspective. Moreover, computing forgetting events requires significant
additional computing resources. Therefore, how to efficiently and effectively
select poisoning samples from the entire dataset is an urgent problem in
backdoor attacks.To address it, firstly, we introduce a poisoning mask into the
regular backdoor training loss. We suppose that a backdoored model training
with hard poisoning samples has a more backdoor effect on easy ones, which can
be implemented by hindering the normal training process (\ie, maximizing loss
\wrt mask). To further integrate it with normal training process, we then
propose a learnable poisoning sample selection strategy to learn the mask
together with the model parameters through a min-max optimization.Specifically,
the outer loop aims to achieve the backdoor attack goal by minimizing the loss
based on the selected samples, while the inner loop selects hard poisoning
samples that impede this goal by maximizing the loss. After several rounds of
adversarial training, we finally select effective poisoning samples with high
contribution. Extensive experiments on benchmark datasets demonstrate the
effectiveness and efficiency of our approach in boosting backdoor attack
performance
Memristive Non-Volatile Memory Based on Graphene Materials
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices
Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric
Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlOx thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (104), the narrowest resistance distribution, the longest retention time (>104 s) and the most endurance cycles (>150)
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