Optoelectronics of Inverted Type-I CdS/CdSe Core/Crown Quantum Ring

Inverted type-I heterostructure core/crown quantum rings (QRs) are quantum-efficient luminophores, whose spectral characteristics are highly tunable. Here, we study the optoelectronic properties of type-I core/crown CdS/CdSe QRs in the zincblende phase - over contrasting lateral size and crown width. For this we inspect their strain profiles, transition energies, transition matrix elements, spatial charge densities, electronic bandstructure, band-mixing probabilities, optical gain spectra, maximum optical gains and differential optical gains. Our framework uses an effective-mass envelope function theory based on the 8-band k$\cdot$p method employing the valence force field model for calculating the atomic strain distributions. The gain calculations are based on the density-matrix equation and take into consideration the excitonic effects with intraband scattering. Variations in the QR lateral size and relative widths of core and crown (ergo the composition) affect their energy levels, band-mixing probabilities, optical transition matrix elements, emission wavelengths/intensity, etc. The optical gain of QRs is also strongly dimension and composition dependent with further dependency on the injection carrier density causing band-filling effect. They also affect the maximum and differential gain at varying dimensions and compositions.Comment: Published in AIP Journal of Applied Physics (11 pages, 7 figures

Extracting high fidelity quantum computer hardware from random systems

An overview of current status and prospects of the development of quantum computer hardware based on inorganic crystals doped with rare-earth ions is presented. Major parts of the experimental work in this area has been done in two places, Canberra, Australia and Lund, Sweden, and the present description follows more closely the Lund work. Techniques will be described that include optimal filtering of the initially inhomogeneously broadened profile down to well separated and narrow ensembles, as well as the use of advanced pulse-shaping in order to achieve robust arbitrary single-qubit operations with fidelities above 90%, as characterized by quantum state tomography. It is expected that full scalability of these systems will require the ability to determine the state of single rare-earth ions. It has been proposed that this can be done using special readout ions doped into the crystal and an update is given on the work to find and characterize such ions. Finally, a few aspects on the possibilities for remote entanglement of ions in separate rare-earth-ion-doped crystals are considered.Comment: 19 pages, 9 figures. Written for The Proceedings of the Nobelsymposium on qubits for future quantum computers, Gothenburg, May-0

A study on inclusion formation mechanism in alpha-LiIO sub 3 crystals

The spatial distribution of inclusions in alpha-LiIO3 crystals by means of an argon laser beam scanning technique is studied. The effects of crystal dimensions and solution fluid flow on the inclusion formation in the alpha-LiIO3 crystals were observed. It was further shown that the fluid flow plays an important role in the formation of inclusions. The results obtained were further applied and verified by growing a perfect alpha-LiIO3 single crystal. An experimental foundation for further theoretical studies on the causes of inclusions may be provided

Bias-induced insulator-metal transition in organic electronics

We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is explained with the energy levels crossover that eliminates the Peierls phase and delocalizes the electron states near the threshold voltage. This may account for the experimental observations on the devices that exhibit intrinsic bistable conductance switching with large on-off ratio.Comment: 6 pages, 3 figures. To appear in Applied Physics Letter