Evaluating Restorative Justice: A Guide for Practitioners

Restorative Justice (RJ) Programs exist in schools, workplaces, communities, the justice system, and other community and organizational settings and are targeted at various populations. In spite of numerous restorative interventions, there have been few comprehensive evaluations of those interventions that document RJ successes or provide evidence to increase the likelihood of success. RJ is responsive and emergent in nature; it is dynamic and ever changing. It is not a program with a linear path from idea to design to implementation to outcomes. RJ presents challenges to traditional approaches to research, such as process evaluations and long-term outcome studies. This research will provide an examination and synthesis of the ways in which RJ programs include evaluation into program operations and processes, and the challenges these programs face in so doing. It will also provide a prescriptive guide regarding how to evaluate RJ programs with methodological rigor

Pinpointing the Dominant Component of Contact Resistance to Atomically Thin Semiconductors

Achieving good electrical contacts is one of the major challenges in realizing devices based on atomically thin two-dimensional (2D) semiconductors. Several studies have examined this hurdle, but a universal understanding of the contact resistance and an underlying approach to its reduction are currently lacking. In this work we expose the shortcomings of the classical contact resistance model in describing contacts to 2D materials, and offer a correction based on the addition of a lateral pseudo-junction resistance component (Rjun). We use a combination of unique contact resistance measurements to experimentally characterize Rjun for Ni contacts to monolayer MoS2. We find that Rjun is the dominating component of the contact resistance in undoped 2D devices and show that it is responsible for most of the back-gate bias and temperature dependence. Our corrected model and experimental results help understand the underlying physics of state-of-the-art contact engineering approaches in the context of minimizing Rjun

Thermal Transport Across Graphene Step Junctions

Step junctions are often present in layered materials, i.e. where single-layer regions meet multi-layer regions, yet their effect on thermal transport is not understood to date. Here, we measure heat flow across graphene junctions (GJs) from monolayer to bilayer graphene, as well as bilayer to four-layer graphene for the first time, in both heat flow directions. The thermal conductance of the monolayer-bilayer GJ device ranges from ~0.5 to 9.1x10^8 Wm-2K-1 between 50 K to 300 K. Atomistic simulations of such GJ device reveal that graphene layers are relatively decoupled, and the low thermal conductance of the device is determined by the resistance between the two dis-tinct graphene layers. In these conditions the junction plays a negligible effect. To prove that the decoupling between layers controls thermal transport in the junction, the heat flow in both directions was measured, showing no evidence of thermal asymmetry or rectification (within experimental error bars). For large-area graphene applications, this signifies that small bilayer (or multilayer) islands have little or no contribution to overall thermal transport

Band structure and electronic transport across Ta2O5/Nb:SrTiO3 interfaces

Resistive switching devices promise significant progress in memory and logic technologies. One of the hurdles toward their practical realization is the high forming voltages required for their initial activation, which may be incompatible with standard microelectronic architectures. This work studies the conduction mechanisms of Ta2O5 layers, one of the most studied materials for memristive devices, in their initial, as-fabricated state (“pre-forming”). By separating this aspect and resolving the current mechanisms, we provide the input that may guide future design of resistive switching devices. For this purpose, Ta2O5 layers were sputtered on conductive Nb:SrTiO3 substrates. Ta2O5/Nb:SrTiO3 structures exhibit diode behavior with an ideality factor of n ≈ 1.3 over four current decades. X-ray photoelectron spectroscopy analysis of the interfacial band offsets reveals a barrier of 1.3 ± 0.3 eV for electrons injected from the semiconductor into Ta2O5. Temperature-dependent current–voltage analysis exhibits rectifying behavior. While several conduction mechanisms produce good fits to the data, comparing the physical parameters of these models to the expected physical parameters led us to conclude that trap-assisted tunneling (TAT) is the most likely conduction mechanism. Fitting the data using a recent TAT model and with the barrier that was measured by spectroscopy fully captures the temperature dependence, further validating this conduction mechanism.Fil: Miron, Dror. Technion - Israel Institute of Technology; IsraelFil: Cohen Azarzar, Dana. Technion - Israel Institute of Technology; IsraelFil: Segev, Noa. Technion - Israel Institute of Technology; IsraelFil: Baskin, Maria. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Félix Roberto Mario. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Buenos Aires. Unidad de Investigación y Desarrollo de las Ingenierías; ArgentinaFil: Yalon, Eilam. Technion - Israel Institute of Technology; IsraelFil: Kornblum, Lior. Technion - Israel Institute of Technology; Israe