Electrical Nanoprobing of Semiconducting Carbon Nanotubes using an Atomic Force Microscope

We use an Atomic Force Microscope (AFM) tip to locally probe the electronic properties of semiconducting carbon nanotube transistors. A gold-coated AFM tip serves as a voltage or current probe in three-probe measurement setup. Using the tip as a movable current probe, we investigate the scaling of the device properties with channel length. Using the tip as a voltage probe, we study the properties of the contacts. We find that Au makes an excellent contact in the p-region, with no Schottky barrier. In the n-region large contact resistances were found which dominate the transport properties.Comment: 4 pages, 5 figure

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating \textit{before} it is fully spin polarized. The minority-spin population at the transition is ~8*10^{9} cm^{-2}, close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.Comment: 4 pages with figure

Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes

Electron scattering rates in metallic single-walled carbon nanotubes are studied using an atomic force microscope as an electrical probe. From the scaling of the resistance of the same nanotube with length in the low and high bias regimes, the mean free paths for both regimes are inferred. The observed scattering rates are consistent with calculations for acoustic phonon scattering at low biases and zone boundary/optical phonon scattering at high biases.Comment: 4 pages, 5 figure

Low-field magnetoresistance in GaAs 2D holes

We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on samples grown on (311)A GaAs substrates. At high densities, $p \gtrsim 1 \times 10^{11}$ cm$^{-2}$, we observe a remarkably strong positive magnetoresistance. It appears in samples with an anisotropic in-plane mobility and predominantly along the low-mobility direction, and is strongly dependent on the perpendicular electric field and the resulting spin-orbit interaction induced spin-subband population difference. A careful examination of the data reveals that the magnetoresistance must result from a combination of factors including the presence of two spin-subbands, a corrugated quantum well interface which leads to the mobility anisotropy, and possibly weak anti-localization. None of these factors can alone account for the observed positive magnetoresistance. We also present the evolution of the data with density: the magnitude of the positive magnetoresistance decreases with decreasing density until, at the lowest density studied ($p = 2.5 \times 10^{10}$ cm$^{-2}$), it vanishes and is replaced by a weak negative magnetoresistance.Comment: 8 pages, 8 figure

Spin-valley phase diagram of the two-dimensional metal-insulator transition

Using symmetry breaking strain to tune the valley occupation of a two-dimensional (2D) electron system in an AlAs quantum well, together with an applied in-plane magnetic field to tune the spin polarization, we independently control the system's valley and spin degrees of freedom and map out a spin-valley phase diagram for the 2D metal-insulator transition. The insulating phase occurs in the quadrant where the system is both spin- and valley-polarized. This observation establishes the equivalent roles of spin and valley degrees of freedom in the 2D metal-insulator transition.Comment: 4 pages, 2 figure

Migration and social mobility between Argentina and Spain : climbing the social hierarchy in the transnational space

Production of INCASI Project H2020-MSCA-RISE-2015 GA 691004This chapter analyses the relationship between migration and social mobility in Argentina and Spain from a transnational perspective focusing on two dimensions: the patterns of intergenerational social mobility of immigrants and natives in both countries; the social mobility strategies and trajectories of Galicians families in Buenos Aires and Argentinians, of Galician origin, who migrated to Galicia after the 2001 crisis. The chapter begins by contextualizing the migratory trends in Europe and Latin America. This is followed by a comparative study of how immigration impacts on the class structure and social mobility patterns in Argentina and Spain. Quantitative analysis techniques are used to study the intergenerational social mobility rates. The statistical analysis of stratification and social mobility surveys have been benchmarked against previous studies conducted in Argentina (Germani, G., Movilidad social en la sociedad industrial. EUDEBA, Buenos Aires, 1963; Dalle, P., Movilidad social desde las clases populares. Un estudio sociológico en el Área Metropolitana de Buenos Aires (1960-2013). CLACSO/Instituto de Investigaciones Gino Germani-UBA/CICCUS, Buenos Aires, 2016) and Spain (Fachelli, S., & López-Roldán, P., Revista Española de Sociología 26:1-20, 2017). Secondly, qualitative research methods are used to consider the social mobility strategies and class trajectories of migrant families. We analyse two fieldworks, developed in the framework of other research projects (based on 44 biographical and semi-structured interviews). These case studies were carried out with Galicians that migrated to Argentina between 1940 and 1960 and Argentinians, of Galician origin, who migrated to Galicia after the 2001 crisis

Interactions in high-mobility 2D electron and hole systems

Electron-electron interactions mediated by impurities are studied in several high-mobility two-dimensional (electron and hole) systems where the parameter $k_BT\tau /\hbar$ changes from 0.1 to 10 ($\tau$ is the momentum relaxation time). This range corresponds to the \textit{intermediate} and \textit {ballistic} regimes where only a few impurities are involved in electron-electron interactions. The interaction correction to the Drude conductivity is detected in the temperature dependence of the resistance and in the magnetoresistance in parallel and perpendicular magnetic fields. The effects are analysed in terms of the recent theories of electron interactions developed for the ballistic regime. It is shown that the character of the fluctuation potential (short-range or long-range) is an important factor in the manifestation of electron-electron interactions in high-mobility 2D systems.Comment: 22 pages, 11 figures; to appear in proceedings of conference "Fundamental Problems of Mesoscopic Physics", Granada, Spain, 6-11 September, 200

Photocurrent Imaging of p-n Junctions and Local Defects in Ambipolar Carbon Nanotube Transistors

We use scanning photocurrent microscopy (SPCM) to investigate the properties of internal p-n junctions as well as local defects in ambipolar carbon nanotube (CNT) transistors. Our SPCM images show strong signals near metal contacts whose polarity and positions change depending on the gate bias. SPCM images analyzed in conjunction with the overall conductance also indicate the existence and gate-dependent evolution of internal p-n junctions near contacts in the n-type operation regime. To determine the p-n junction position and the depletion width with a nanometer scale resolution, a Gaussian fit was used. We also measure the electric potential profile of CNT devices at different gate biases, which shows that both local defects and induced electric fields can be imaged using the SPCM technique. Our experiment clearly demonstrates that SPCM is a valuable tool for imaging and optimizing electrical and optoelectronic properties of CNT based devices.Comment: 5 pages, 5 figure

Metallic behavior and related phenomena in two dimensions

For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a transition has been reported in a variety of dilute two-dimensional electron and hole systems. The physics behind these observations is presently not understood. We review and discuss the main experimental findings and suggested theoretical models.Comment: To be published in Rev. Mod. Phy