Surface charge dynamics on ferroelectric PbZr0.48Ti0.52O3 films responding to the switching bias of electric force microscope

We investigated the role of surface charges in writing and reading ferroelectric bits on an epitaxial PbZr0.48Ti0.52O3 thin film by electric force microscopy (EFM). The sign of EFM surface potential was reversed within several hundred microseconds for 10 V. For a negative bias voltage of -10 V, EFM surface potential was reversed in several milliseconds. The different time scales of the EFM surface potential reversals originate from the screening of the ferroelectric polarization charges by the surface charges which pass over two different Schottky barriers depending on the applied bias polarity.X118sciescopu

Hormad1 mutation disrupts synaptonemal complex formation, recombination, and chromosome segregation in mammalian meiosis

Meiosis is unique to germ cells and essential for reproduction. During the first meiotic division, homologous chromosomes pair, recombine, and form chiasmata. The homologues connect via axial elements and numerous transverse filaments to form the synaptonemal complex. The synaptonemal complex is a critical component for chromosome pairing, segregation, and recombination. We previously identified a novel germ cell-specific HORMA domain encoding gene, Hormad1, a member of the synaptonemal complex and a mammalian counterpart to the yeast meiotic HORMA domain protein Hop1. Hormad1 is essential for mammalian gametogenesis as knockout male and female mice are infertile. Hormad1 deficient (Hormad1-/-) testes exhibit meiotic arrest in the early pachytene stage, and synaptonemal complexes cannot be visualized by electron microscopy. Hormad1 deficiency does not affect localization of other synaptonemal complex proteins, SYCP2 and SYCP3, but disrupts homologous chromosome pairing. Double stranded break formation and early recombination events are disrupted in Hormad1-/- testes and ovaries as shown by the drastic decrease in the γH2AX, DMC1, RAD51, and RPA foci. HORMAD1 co-localizes with cH2AX to the sex body during pachytene. BRCA1, ATR, and γH2AX co-localize to the sex body and participate in meiotic sex chromosome inactivation and transcriptional silencing. Hormad1 deficiency abolishes γH2AX, ATR, and BRCA1 localization to the sex chromosomes and causes transcriptional de-repression on the X chromosome. Unlike testes, Hormad1-/- ovaries have seemingly normal ovarian folliculogenesis after puberty. However, embryos generated from Hormad1-/- oocytes are hyper- and hypodiploid at the 2 cell and 8 cell stage, and they arrest at the blastocyst stage. HORMAD1 is therefore a critical component of the synaptonemal complex that affects synapsis, recombination, and meiotic sex chromosome inactivation and transcriptional silencing. © 2010 Shin et al

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices.

The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer

Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.

For high-speed and large-area active-matrix displays, metal-oxide thin-film transistors (TFTs) with high field-effect mobility, stability, and good uniformity are essential. Moreover, reducing the RC delay is also important to achieve high-speed operation, which is induced by the parasitic capacitance formed between the source/drain (S/D) and the gate electrodes. From this perspective, self-aligned top-gate oxide TFTs can provide advantages such as a low parasitic capacitance for high-speed displays due to minimized overlap between the S/D and the gate electrodes. Here, we demonstrate self-aligned top-gate oxide TFTs using a solution-processed indium-gallium-zinc-oxide (IGZO) channel and crosslinked poly(4-vinylphenol) (PVP) gate dielectric layers. By applying a selective Ar plasma treatment on the IGZO channel, low-resistance IGZO regions could be formed, having a sheet resistance value of ~20.6 kΩ/sq., which can act as the homojunction S/D contacts in the top-gate IGZO TFTs. The fabricated self-aligned top-gate IGZO TFTs exhibited a field-effect mobility of 3.93 cm2/Vs and on/off ratio of ~106, which are comparable to those fabricated using a bottom-gate structure. Furthermore, we also demonstrated self-aligned top-gate TFTs using electrospun indium-gallium-oxide (IGO) nanowires (NWs) as a channel layer. The IGO NW TFTs exhibited a field-effect mobility of 0.03 cm2/Vs and an on/off ratio of >105. The results demonstrate that the Ar plasma treatment for S/D contact formation and the solution-processed PVP gate dielectric can be implemented in realizing self-aligned top-gate oxide TFTs

Prostate-specific extracellular vesicles as a novel biomarker in human prostate cancer

Extracellular vesicles (EVs) may play an important role in cancer development and progression. We aimed to investigate the prognostic potential of prostate-specific EVs in prostate cancer (PCa) patients. Plasma and prostate tissue were collected from patients who underwent surgery for PCa (n = 82) or benign prostatic hyperplasia (BPH, n = 28). To analyze the quantity of EVs in prostate, we performed transmission electron microscopy (TEM), immuno-TEM with CD63 and prostate-specific membrane antigen (PSMA), and immunofluorescence staining. After EV isolation from plasma, CD63 and PSMA concentration was measured using ELISA kits. PSMA-positive areas in prostate differed in patients with BPH, and low-, intermediate-, and high-risk PCa (2.4, 8.2, 17.5, 26.5%, p < 0.001). Plasma PSMA-positive EV concentration differed in patients with BPH, and low-, intermediate-, and high-risk PCa (21.9, 43.4, 49.2, 59.9 ng/mL, p < 0.001), and ROC curve analysis indicated that plasma PSMA-positive EV concentration differentiated PCa from BPH (AUC 0.943). Patients with lower plasma PSMA-positive EV concentration had greater prostate volume (50.2 vs. 33.4 cc, p < 0.001) and lower pathologic Gleason score (p = 0.025). During the median follow-up of 18 months, patients with lower plasma PSMA-positive EV concentration tended to have a lower risk of biochemical failure than those with higher levels of prostate-specific EVs (p = 0.085).11910Ysciescopu

Macroscopic nucleation phenomena in continuum media with long-range interactions

Nucleation, commonly associated with discontinuous transformations between metastable and stable phases, is crucial in fields as diverse as atmospheric science and nanoscale electronics. Traditionally, it is considered a microscopic process (at most nano-meter), implying the formation of a microscopic nucleus of the stable phase. Here we show for the first time, that considering long-range interactions mediated by elastic distortions, nucleation can be a macroscopic process, with the size of the critical nucleus proportional to the total system size. This provides a new concept of "macroscopic barrier-crossing nucleation". We demonstrate the effect in molecular dynamics simulations of a model spin-crossover system with two molecular states of different sizes, causing elastic distortions.Comment: 12 pages, 4 figures. Supplementary information accompanies this paper at http://www.nature.com/scientificreport

Novel and simple patterning process of quantum dots via transfer printing for active matrix qd-led

© 2020 SID. The next generation of a self-emitting display requires precise and stable patterning techniques to shape Red, Green, and Blue pixels using quantum dots. In this study, we propose the novel and simple transfer printing process for the active matrix QD-LEDs

Waterproof Flexible InP@ZnSeS Quantum Dot Light-Emitting Diode

The development of flexible displays for wearable electronics applications has created demand for high-performance quantum dot (QD) light-emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)-based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost-effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP-based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS-based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution-based amorphous fluoropolymer, is demonstrated. The CYTOP-encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd/m2 as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for ~20 minutes. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications