Defect Engineering in the formation of Ultra-shallow junctions for advanced nano-metal-oxide-semiconductor technology

Ph.DDOCTOR OF PHILOSOPH

Method for fabricating semiconductor devices with reduced junction diffusion

US8053340Granted Paten

Localized anneal

US8268733Granted Paten

Method for forming a shallow junction region using defect engineering and laser annealing

US7888224Granted Paten

Method for fabricating semiconductor devices with shallow diffusion regions

US8101487Granted Paten

Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics

Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO₂). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO₂. The SCCO₂ process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices

Stable organic monolayers on oxide-free silicon/germanium in a supercritical medium: A new route to molecular electronics

10.1021/jz4005416Journal of Physical Chemistry Letters491397-140