58 research outputs found

    Metal-to-insulator crossover and pseudogap in single-layer compound Bi2+x_{2+x}Sr2x_{2-x}Cu1+y_{1+y}O6+δ_{6+\delta} single crystals in high magnetic fields

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    The in-plane ρab(H)\rho_{ab}(H) and the out-of-plane ρc(H)\rho_c(H) magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide doping range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover from a metallic to and insulating behavior of ρab(T)\rho_{ab}(T) is observed in the low temperature normal state, resulting in a disorder induced metal insulator transition. In the zero temperature limit, the normal state ratio ρc(H)/ρab(H)\rho_c(H)/\rho_{ab}(H) of the heavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, in striking contrast with that observed in La-doped Bi2201 and LSCO systems. Our data strongly support that that the negative out-of-plane magnetoresistance is largely governed by interlayer conduction of quasiparticles in the superconducting state, accompanied by a small contribution of normal state transport associated with the field dependent pseudogap. Both in the optimal and overdoped regimes, the semiconducting behavior of ρc(H)\rho_c(H) persists even for magnetic fields above the pseudogap closing field HpgH_{pg}. The method suggested by Shibauchi \textit{et al.} (Phys. Rev. Lett. \textbf{86}, 5763, (2001)) for evaluating HpgH_{pg} is unsuccessful for both under- and overdoped Bi2201 samples. Our findings suggest that the normal state pseudogap is not always a precursor of superconductivity.Comment: 11 pages, 8 figures, published in PRB Nov 200

    Carrier concentrations in Bi_{2}Sr_{2-z}La_{z}CuO_{6+\delta} single crystals and their relation to Hall coefficient and thermopower

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    We measured the thermopower S and the Hall coefficients R_H of Bi_{2}Sr_{2-z}La_{z}CuO_{6+\delta} (BSLCO) single crystals in a wide doping range, in an effort to identify the actual hole concentrations per Cu, p, in this system. It is found that the "universal" relation between the room-temperature thermopower and T_c does not hold in the BSLCO system. Instead, comparison of the temperature-dependent R_H data with other cuprate systems is used as a tool to identify the actual p value. To justify this approach, we compare normalized R_H(T) data of BSLCO, La_{2-x}Sr_{x}CuO_{4} (LSCO), YBa_{2}Cu_{3}O_{y}, and Tl_{2}Ba_{2}CuO_{6+\delta}, and demonstrate that the R_H(T) data of the LSCO system can be used as a template for the estimation of p. The resulting phase diagram of p vs T_c for BSLCO suggests that T_c is anomalously suppressed in the underdoped samples, becoming zero at around p ~ 0.10, while the optimum T_c is achieved at p ~ 0.16 as expected.Comment: 4 pages including 5 figures, accepted for publication in Phys. Rev. B, Rapid Communication

    Metal-to-Insulator Crossover in the Low-Temperature Normal State of Bi_{2}Sr_{2-x}La_{x}CuO_{6+\delta}

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    We measure the normal-state in-plane resistivity of La-doped Bi-2201 single crystals at low temperatures by suppressing superconductivity with 60-T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic to insulating behavior in the low-temperature normal state. This crossover is estimated to occur near 1/8 doping, well inside the underdoped regime, and not at optimum doping as reported for other cuprates. The insulating regime is marked by a logarithmic temperature dependence of the resistivity over two decades of temperature, suggesting that a peculiar charge localization is common to the cuprates.Comment: 4 pages, 5 figures, accepted for publication in PR

    Out-of-plane transport properties of Zn-substituted Bi-2212 single crystals with different oxygen content

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    Ultrahigh-pressure form of Si O2 glass with dense pyrite-type crystalline homology

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    High-pressure synthesis of denser glass has been a longstanding interest in condensed-matter physics and materials science because of its potentially broad industrial application. Nevertheless, understanding its nature under extreme pressures has yet to be clarified due to experimental and theoretical challenges. Here we reveal the formation of OSi4 tetraclusters associated with that of SiO7 polyhedra in SiO2 glass under ultrahigh pressures to 200 gigapascal confirmed both experimentally and theoretically. Persistent homology analyses with molecular dynamics simulations found increased packing fraction of atoms whose topological diagram at ultrahigh pressures is similar to a pyrite-type crystalline phase, although the formation of tetraclusters is prohibited in the crystalline phase. This critical difference would be caused by the potential structural tolerance in the glass for distortion of oxygen clusters. Furthermore, an expanded electronic band gap demonstrates that chemical bonds survive at ultrahigh pressure. This opens up the synthesis of topologically disordered dense oxide glasses.Peer reviewe
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