3,145 research outputs found
Tensile test of pressureless-sintered silicon nitride at elevated temperature
Uniaxial tensile strength tests of pressureless sintered silicon nitride were carried out in air at temperatures ranging from room temperature up to 1600 C. Silicon nitrides containing Y2O3, Al2O3, Al2O3-MgO, or MgO-CeO2 additives were tested. The results show that the composition of the additive used influences the strength characteristics of the silicon nitride. The tensile strength rapidly decreased at temperatures above 1000 C for the materials containing MgO as the additive and above 1000 C for the material with Y2O3. When the temperature increased to as high as 1300 C, the strength decreased to about 10 percent of the room temperature strength in each case. Observations of the fracture origin and of the crack propagation on the fracture surfaces are discussed
Electrical pump-and-probe study of spin singlet-triplet relaxation in a quantum dot
Spin relaxation from a triplet excited state to a singlet ground state in a
semiconductor quantum dot is studied by employing an electrical pump-and-probe
method. Spin relaxation occurs via cotunneling when the tunneling rate is
relatively large, confirmed by a characteristic square dependence of the
relaxation rate on the tunneling rate. When cotunneling is suppressed by
reducing the tunneling rate, the intrinsic spin relaxation is dominated by
spin-orbit interaction. We discuss a selection rule of the spin-orbit
interaction based on the observed double-exponential decay of the triplet
state.Comment: 4 pages, 4 figure
A gate-defined silicon quantum dot molecule
We report electron transport measurements of a silicon double dot formed in
multi-gated metal-oxide-semiconductor structures with a 15-nm-thick
silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an
excitation spectrum in weakly coupled dots and an energy level anticrossing in
strongly coupled ones. Such a quantum dot molecule with both charge and energy
quantization provides the essential prerequisite for future implementation of
silicon-based quantum computations.Comment: 11pages,3figure
Non-equilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation
We investigate non-equilibrium transport in the absence of spin-flip energy
relaxation in a few-electron quantum dot artificial atom. Novel non-equilibrium
tunneling processes involving high-spin states which cannot be excited from the
ground state because of spin-blockade, and other processes involving more than
two charge states are observed. These processes cannot be explained by orthodox
Coulomb blockade theory. The absence of effective spin relaxation induces
considerable fluctuation of the spin, charge, and total energy of the quantum
dot. Although these features are revealed clearly by pulse excitation
measurements, they are also observed in conventional dc current characteristics
of quantum dots.Comment: accepted for publication in Phys. Rev.Let
Coherent manipulation of electronic states in a double quantum dot
We investigate coherent time-evolution of charge states (pseudo-spin qubit)
in a semiconductor double quantum dot. This fully-tunable qubit is manipulated
with a high-speed voltage pulse that controls the energy and decoherence of the
system. Coherent oscillations of the qubit are observed for several
combinations of many-body ground and excited states of the quantum dots.
Possible decoherence mechanisms in the present device are also discussed.Comment: RevTe
Electron counting of single-electron tunneling current
Single-electron tunneling through a quantum dot is detected by means of a radio-frequency single-electron transistor.. Poisson statistics of single-electron-tunneling events are observed from frequency domain measurements, and individual tunneling events are detected in the time-domain measurements. Counting tunneling events gives an accurate current measurement in the saturated current regime, where electrons tunnel into the dot only from one electrode and tunnel out of the dot only to the other electrode. (C) 2004 American Institute of Physics.X119698sciescopu
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