Chemical Potential Shift in Nd2−x_{2-x}Cex_{x}CuO4_{4}: Contrasting Behaviors of the Electron- and Hole-Doped Cuprates

We have studied the chemical potential shift in the electron-doped superconductor Nd$_{2-x}$Ce$_{x}$CuO$_{4}$ by precise measurements of core-level photoemission spectra. The result shows that the chemical potential monotonously increases with electron doping, quite differently from La$_{2-x}$Sr$_{x}$CuO$_{4}$, where the shift is suppressed in the underdoped region. If the suppression of the shift in La$_{2-x}$Sr$_{x}$CuO$_{4}$ is attributed to strong stripe fluctuations, the monotonous increase of the chemical potential is consistent with the absence of stripe fluctuations in Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. The chemical potential jump between Nd$_{2}$CuO$_{4}$ and La$_{2}$CuO$_{4}$ is found to be much smaller than the optical band gaps.Comment: 4 pages, 5 figure

Photoemission Spectral Weight Transfer and Mass Renormalization in the Fermi-Liquid System La1−x_{1-x}Srx_xTiO3+y/2_{3+y/2}

We have performed a photoemission study of La$_{1-x}$Sr$_x$TiO$_{3+y/2}$ near the filling-control metal-insulator transition (MIT) as a function of hole doping. Mass renormalization deduced from the spectral weight and the width of the quasi-particle band around the chemical potential $\mu$ is compared with that deduced from the electronic specific heat. The result implies that, near the MIT, band narrowing occurs strongly in the vicinity of $\mu$. Spectral weight transfer occurs from the coherent to the incoherent parts upon antiferromagnetic ordering, which we associate with the partial gap opening at $\mu$.Comment: 4 pages, 3 figure

Testing the validity of THz reflection spectra by dispersion relations

Complex response function obtained in reflection spectroscopy at terahertz range is examined with algorithms based on dispersion relations for integer powers of complex reflection coefficient, which emerge as a powerful and yet uncommon tools in examining the consistency of the spectroscopic data. It is shown that these algorithms can be used in particular for checking the success of correction of the spectra by the methods of Vartiainen et al [1] and Lucarini et al [2] to remove the negative misplacement error in the terahertz time-domain spectroscopy.Comment: 17 pages, 4 figure

Enhancement of electronic anomalies in iron-substituted La_2-x_Sr_x_Cu_1-y_Fe_y_O_4_ around x=0.22

We have measured the temperature dependences of Rho and Chi for Fe-substituted La_2-x_Sr_x_Cu_1-y_Fe_y_O_4_ in the overdoped regime, in order to investigate Fe-substitution effects on electronic properties around x=0.22. From the Rho measurements, it has been found around x=0.22 that the values of Rho are large at room temperature and that Rho exhibits a pronounced upturn at low temperatures. Moreover, from the Rho and Chi measurements, it has been found that T_c_ is anomalously depressed around x=0.22. These results indicate that the electronic anomalies around x=0.22 are enhanced by Fe substitution, which might be related to the development of stripe correlations by Fe substitution.Comment: 7 pages, 3 figure

Charge ordering and chemical potential shift in La2−x_{2-x}Srx_xNiO4_4 studied by photoemission spectroscopy

We have studied the chemical potential shift in La$_{2-x}$Sr$_x$NiO$_4$ and the charge ordering transition in La$_{1.67}$Sr$_{0.33}$NiO$_4$ by photoemission spectroscopy. The result shows a large ($\sim$ 1 eV/hole) downward shift of the chemical potential with hole doping in the high-doping regime ($\delta \gtrsim$ 0.33) while the shift is suppressed in the low-doping regime ($\delta \lesssim$ 0.33). This suppression is attributed to a segregation of doped holes on a microscopic scale when the hole concentration is lower than $\delta \simeq 1/3$. In the $\delta = 1/3$ sample, the photoemission intensity at the chemical potential vanishes below the charge ordering transition temperature $T_{\rm CO}=$ 240 K.Comment: 5 pages, 4 figure

Pulsed UCN production using a Doppler shifter at J-PARC

We have constructed a Doppler-shifter-type pulsed ultra-cold neutron (UCN) source at the Materials and Life Science Experiment Facility (MLF) of the Japan Proton Accelerator Research Complex (J-PARC). Very-cold neutrons (VCNs) with 136-$\mathrm{m/s}$ velocity in a neutron beam supplied by a pulsed neutron source are decelerated by reflection on a m=10 wide-band multilayer mirror, yielding pulsed UCN. The mirror is fixed to the tip of a 2,000-rpm rotating arm moving with 68-$\mathrm{m/s}$ velocity in the same direction as the VCN. The repetition frequency of the pulsed UCN is $8.33~\mathrm{Hz}$ and the time width of the pulse at production is $4.4~\mathrm{ms}$. In order to increase the UCN flux, a supermirror guide, wide-band monochromatic mirrors, focus guides, and a UCN extraction guide have been newly installed or improved. The $1~\mathrm{MW}$-equivalent count rate of the output neutrons with longitudinal wavelengths longer than $58~\mathrm{nm}$ is $1.6 \times 10^{2}~\mathrm{cps}$, while that of the true UCNs is $80~\mathrm{cps}$. The spatial density at production is $1.4~\mathrm{UCN/cm^{3}}$. This new UCN source enables us to research and develop apparatuses necessary for the investigation of the neutron electric dipole moment (nEDM).Comment: 32 pages, 15 fugures. A grammatical error was fixe

Anomalous electronic susceptibility in Bi2Sr2CuO6+d and comparison with other overdoped cuprates

We report magnetic susceptibility performed on overdoped Bi2Sr2CuO6+d powders as a function of oxygen doping d and temperature T. The decrease of the spin susceptibility with increasing T is confirmed. At sufficient high temperature, the spin susceptibility Chi_s presents an unusual linear temperature dependence Chi_s ~ Chi_s0 -Chi_1 T. Moreover, a linear correlation between Chi_1 and Chi_s0 for increasing hole concentration is displayed. A temperature Tchi, independent of hole doping characterizes this scaling. Comparison with other cuprates of the literature(LSCO, Tl-2201 and Bi-2212), over the same overdoped range, shows similarities with above results. These non conventional metal features will be discussed in terms of a singular narrow-band structure.Comment: 16 pages, 4 figure

Diffusion and activation of n-type dopants in germanium

The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations indicated the existence of a sufficiently high number of impurities with increasing implanted doses. However, spreading resistance probe profiles of electrical concentrations showed electrical concentration saturation in spite of increasing doses and indicated poor activation of As relative to P in Ge. The relationships between the chemical and electrical concentrations of P in Ge and Si were calculated, taking into account the effect of incomplete ionization. The results indicated that the activation of P was almost the same in Ge and Si. The activation ratios obtained experimentally were similar to the calculated values, implying insufficient degeneration of Ge. The profiles of P in Ge substrates with and without damage generated by Ge ion implantation were compared, and it was clarified that the damage that may compensate the activated $n$-type dopants has no relationship with the activation of P in Ge.Comment: 6 pages, 4 figure