Transfer-free electrical insulation of epitaxial graphene from its metal substrate

High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps by x-ray photoemission spectroscopy and demonstrate the electrical insulation using a nano-scale multipoint probe technique.Comment: Accepted for publication in Nano Letter

Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy

We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 oC, and examining the oxide thickness range from 0 to ~;;25 Angstrom. The oxidation rate is initially very high (with rates of up to ~;;225 Angstrom/h) and then, after a certain initial thickness of the oxide in the range of 6-22 Angstrom is formed, decreases to a slow state (with rates of ~;;1.5-4.0 Angstrom/h). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation

Precise control of epitaxy of graphene by microfabricating SiC substrate

Epitaxial graphene (EG) on SiC is promising owing to a capability to produce high-quality film on a wafer scale. One of the remaining issues is microscopic thickness variation of EG near surface steps, which induces variations in its electronic properties and device characteristics. We demonstrate here that the variations of layer thickness and electronic properties are minimized by using microfabricated SiC substrates which spatially confines the epitaxy. This technique will contribute to the realization of highly reliable graphene devices

Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy

We have applied ambient-pressure x-ray photoelectron spectroscopy with Si 2p chemical shifts to study the real-time dry oxidation of Si(100), using pressures in the range of 0.01-1 Torr and temperatures of 300-530 oC, and examining the oxide thickness range from 0 to ~;;25 Angstrom. The oxidation rate is initially very high (with rates of up to ~;;225 Angstrom/h) and then, after a certain initial thickness of the oxide in the range of 6-22 Angstrom is formed, decreases to a slow state (with rates of ~;;1.5-4.0 Angstrom/h). Neither the rapid nor the slow regime is explained by the standard Deal-Grove model for Si oxidation