Numerical Simulation of Radio Signal from Extended Air Showers

The burst of radio emission by the extensive air shower provides a promising alternative for detecting ultra-high energy cosmic rays.We have developed an independent numerical program to simulate these radio signals. Our code is based on a microscopic treatment, with both the geosynchrotron radiation and charge excess effect included. Here we make a first presentation of our basic program and its results. The time signal for different polarizations are computed, we find that the pulses take on a bipolar pattern, the spectrum is suppressed towards the lower frequencies.We investigate how the shower at different heights in atmosphere contribute to the total signal, and examine the signal strength and distribution at sites of different elevations. We also study the signal from showers of different inclination angles and azimuth directions. In all these cases we find the charge excess effect important.Comment: 23 pages, 14 figure

TeV cosmic-ray proton and helium spectra in the myriad model II

Recent observations show that the cosmic ray nuclei spectra start to harden above 100 GeV, in contradiction with the conventional steady-state cosmic ray model. We had suggested that this anomaly is due to the propagation effect of cosmic rays released from local young cosmic ray sources, the total flux of the cosmic ray should be computed with the myriad model, where contribution from sources in local catalog is added to the background. However, while the hardening could be elegantly explained in this model, the model parameters obtained from the fit skew toward a region with fast diffusion and low supernova rate in the Galaxy, in tension with other observations. In this paper, we further explore this model in order to set up a concordant picture. Two possible improvements related to the cosmic ray sources have been considered. Firstly, instead of the usual axisymmetric disk model, we considered a spiral model of source distribution. Secondly, for the nearby and young sources which are paramount to the hardening, we allow for an energy-dependent escape time. We find that major improvement comes from the energy-dependent escape time of the local sources, and with both modifications, not only the cosmic ray proton and helium anomalies are solved, but also the parameters attain reasonable range values compatible with other analysis.Comment: 13 pages, 7 figures, 1 table, accepted for publication in RA

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization.Comment: 15 pages, 5 figure

UV/Ozone treatment to reduce metal-graphene contact resistance

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 {\Omega} {\mu}m was achieved, while not significantly altering the electrical properties of the graphene channel region of devices.Comment: 17 pages, 5 figure