3,441 research outputs found

    Electrical performance and reliability of n-MOSFETs with gate dielectrics fabricated by different techniques

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    In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress.published_or_final_versio

    Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric

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    This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.published_or_final_versio

    Exception handling in distributed workflow systems using mobile agents

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    2005-2006 > Academic research: refereed > Refereed conference paperVersion of RecordPublishe

    Mobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardment

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    Low-energy (550 eV) argon-ion beam was used to bombard directly, the backsurface of nitrided n-MOSFET's after the completion of all conventional nMOS processing steps. The interface characteristics and inversion layer mobility of the MOS devices were investigated. The results show that, as bombardment time increases, interface state density and fixed charge density decrease first, and then the change slows down or even turns around. Correspondingly, the carrier mobility and drain conductance of the MOS devices are found to enhance first, and then saturate or turn around. Therefore, this simple technique, which is readily compatible with existing IC processing, is effective for restoring some of the lost device performance associated with gate-oxide nitridation.published_or_final_versio

    Compressibility effects on the scalar mixing in reacting homogeneous turbulence

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    The compressibility and heat of reaction influence on the scalar mixing in decaying isotropic turbulence and homogeneous shear flow are examined via data generated by direct numerical simulations (DNS). The reaction is modeled as one-step, exothermic, irreversible and Arrhenius type. For the shear flow simulations, the scalar dissipation rate, as well as the time scale ratio of mechanical to scalar dissipation, are affected by compressibility and reaction. This effect is explained by considering the transport equation for the normalized mixture fraction gradient variance and the relative orientation between the mixture fraction gradient and the eigenvectors of the solenoidal strain rate tensor.Comment: In Turbulent Mixing and Combustion, eds. A. Pollard and S. Candel, Kluwer, 200

    Two maternal origins of Chinese domestic light-body type goose

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    China is particularly rich in goose genetic resources. The systemic study of genetic diversity and origin of Chinese indigenous geese will provide important scientific basis for the conservation, utilization of resources and human history. The 521 bp control region (D-loop) of mitochondrial DNA from 13 lightbody type breeds was sequenced. The results showed that in the D-loop region of the 13 gray goose breeds, the content of T, C, A and G nucleotides was 23.8, 29.0, 32.2 and 15.1%, respectively. The average haplotype diversity (Hd) and nucleotide diversity (Pi) of domestic geese were 0.2153 and 0.00046, respectively. The 13 light-body type breeds had bigger nucleotide variance value among populations than the value within populations and all the breeds did not exist population expansion.Shared haplotype analysis and systemic systematic evolution analysis revealed that Chinese lightbody type domestic goose owned two maternal origins. YL goose breed originated from greylag goose (anser anser), and the other 12 light- body type goose breeds originated from swan goose (anser cygnoides)

    Angiotensin II type 1 receptor-dependent oxidative stress mediates endothelial dysfunction in type 2 diabetic mice

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    The mechanisms underlying the effect of the renin-angiotensin-aldosterone system (RAAS) inhibition on endothelial dysfunction in type 2 diabetes are incompletely understood. This study explored a causal relationship between RAAS activation and oxidative stress involved in diabetes-associated endothelial dysfunction. Daily oral administration of valsartan or enalapril at 10mg/kg/day to db/db mice for 6 weeks reversed the blunted acetylcholine-induced endothelium-dependent dilatations, suppressed the upregulated expression of angiotensin II type 1 receptor (AT1R) and NAD(P)H oxidase subunits (p22phox and p47phox), and reduced reactive oxygen species (ROS) production. Acute exposure to AT1R blocker losartan restored the impaired endothelium-dependent dilatations in aortas of db/db mice and also in renal arteries of diabetic patients (fasting plasma glucose level ≥7.0 mmol/l). Similar observations were also made with apocynin, diphenyliodonium, or tempol treatment in db/db mouse aortas. DHE fluorescence revealed an overproduction of ROS in db/db aortas which was sensitive to inhibition by losartan or ROS scavengers. Losartan also prevented the impairment of endothelium-dependent dilatations under hyperglycemic conditions that were accompanied by high ROS production. The present study has identified an initiative role of AT1R activation in mediating endothelial dysfunction of arteries from db/db mice and diabetic patients. © 2010 Mary Ann Liebert, Inc.published_or_final_versio
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