Performance-based regulation and its applications

2002-2003 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Passivation of Oxide Traps and Interface States in GaAs Metal-Oxide-Semiconductor Capacitor by LaTaON Passivation Layer and Fluorine Incorporation

published_or_final_versio

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

published_or_final_versio

Raman and photoluminescence characterization of focused ion beam patterned InGaN/GaN multi-quantum-wells nanopillar array

High crystal quality GaN nanopillar arrays containing InGaN/GaN multi-quantum wells (MQWs) have been fabricated by focused ion beam followed by wet etch treatments to remove the ion damage. The first order Raman spectra reveal a well-built additional peak when the diameter of the nanopillars is less than 220 nm. This peak is also observed in the GaN pillars without MQW and is clearly assigned to the surface optical (SO) mode originating from the A 1 phonon in wurtzite GaN. The frequency of this SO mode is found to be sensitive with the diameter and surface roughness of the nanopillars. Temperature-variable photoluminescence measurements show that a broadband emission in the as-grown sample split into the two well-resolved bands for nanopillars and the emission band at the higher energy side quickly thermally quenched. © 2011 American Institute of Physics.published_or_final_versio

Genetic diversity and population structure of Caragana microphylla Lam. based on analysis of inter-simple sequence repeat markers

Caragana microphylla Lam. is a long-lived shrub species in the semi-arid, arid and desert regions. To determine the genetic diversity and population structure of C. microphylla Lam., 17 wild populations from the central and eastern part of Inner Mongolia were analyzed by inter-simple sequence repeat. 18 primers  produced 296 bands across a total of 510 individuals. A high percentage of polymorphic loci was observed at species level (PPB = 81.4%). Based on analysis of molecular variance, 74.99% of the genetic variation of C. microphylla Lam. was found within population, 7% difference between regions and 15.2% among collection  sites within regions. Cluster analyses showed that 17 populations are most arranged in the same cluster by  geographic location. An indirect estimate of the GST-derived Nm value (Nm = 1.8921) indicate that gene flow is high among 17 populations. No significant correlation (r2 = 0.13) between genetic and geographic distance was detected. Results of this study suggest that C. microphylla Lam. has a high genetic variability and potential as a source of variation for breeding programs.Key words: Inter-simple sequence repeat (ISSR), Caragana microphylla Lam., genetic structure

Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

OTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.published_or_final_versionThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-20

Climatic causes of maize production loss under global warming in Northeast China

Maize (Zea mays L.) is one of the most important staple crops in Northeast China, and yield losses are mainly induced by climate anomalies, plant diseases and pests. To understand how maize yield loss is affected by global warming, daily precipitation and temperatures, together with provincial agricultural data sets, were analyzed. The results showed that the accumulated temperature, an important factor in agricultural productivity, increased by 5% in 1991–2017, compared to 1961–1990, and that the frequency of low temperatures decreased by 14.8% over the same time period. An increase in drought by 21.6% was observed from 1961–1990 to 1991–2017, caused by decreased growing-season precipitation by −4 mm/decade. In addition, days with heavy rain in August and September increased slightly in Northeast China. In general, maize growth responded positively to the increased thermal conditions; in 1961–1990, 22.7% of observed maize yield-loss cases were due to low temperatures, but only 10% in 1991–2017. However, during the same time, the number of drought-induced yield loss cases increased from 27.3% to 46.7%. Moreover, yield loss cases caused by heavy rainstorms increased from 4.5% to 13.3%, indicating that heavy rainstorms have become an increasing threat to agriculture in Northeast China over the last three decades. In total, at least 70% of cases of provincial yield losses in Northeast China over the last three decades could be attributed to climatic factors. The frequency of climate hazards has changed under global warming, resulting in new challenges for agriculture. While drought and low temperatures were the primary causes for climate-induced yield losses before the 1990s, negative impacts from extreme events, mainly drought but also heavy precipitation, have increased in the last three decades, associated with global change. Farmers, agricultural scientists, and government policy makers could use these results when planning for adaptation to climate change.</jats:p

Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.published_or_final_versio

Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric

Pentacene organic thin-film transistors (OTFTs) with HfLaO high-kappa gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2,NH3,O2, or NO at 400°C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V̇s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore,1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface. © 2010 IEEE.published_or_final_versio

Measurement of the velocities in the transient acceleration process using all-fiber photonic Doppler velocimetry

Based on analysis of basic photonic Doppler velocimetry (PDV), a formula to measure velocity variation in a single cycle is put forward. PDV has been improved in three aspects, namely, the laser, the detector and the data processing. A measurement system for velocity of the initial stage of a shock motion has been demonstrated. Instantaneous velocity measurements have been performed. The experimental results have a good agreement with the values obtained from the accelerometer. Compared with the traditional fringe method, the proposed method in this paper can identify instantaneous velocity variation. So it is particularly suitable for measuring the velocity in the transient acceleration process of shock waves and detonation waves