Genetic Evolution and Molecular Selection of the HE Gene of Influenza C Virus

Influenza C virus (ICV) was first identified in humans and swine, but recently also in cattle, indicating a wider host range and potential threat to both the livestock industry and public health than was originally anticipated. The ICV hemagglutinin-esterase (HE) glycoprotein has multiple functions in the viral replication cycle and is the major determinant of antigenicity. Here, we developed a comparative approach integrating genetics, molecular selection analysis, and structural biology to identify the codon usage and adaptive evolution of ICV. We show that ICV can be classified into six lineages, consistent with previous studies. The HE gene has a low codon usage bias, which may facilitate ICV replication by reducing competition during evolution. Natural selection, dinucleotide composition, and mutation pressure shape the codon usage patterns of the ICV HE gene, with natural selection being the most important factor. Codon adaptation index (CAI) and relative codon deoptimization index (RCDI) analysis revealed that the greatest adaption of ICV was to humans, followed by cattle and swine. Additionally, similarity index (SiD) analysis revealed that swine exerted a stronger evolutionary pressure on ICV than humans, which is considered the primary reservoir. Furthermore, a similar tendency was also observed in the M gene. Of note, we found HE residues 176, 194, and 198 to be under positive selection, which may be the result of escape from antibody responses. Our study provides useful information on the genetic evolution of ICV from a new perspective that can help devise prevention and control strategies

Glass formation and properties of Ge-Ga-Te-ZnI2 far infrared chalcohalide glasses

International audienceIn order to develop novel far infrared window material, a series of Ge-Ga-Te-ZnI2 chalcohalide glasses were prepared by traditional melt-quenching method and their glass-forming region was determined also. Here, some measurements including X-ray diffraction (XRD), differential thermal analysis (DTA), UV-Vis-NIR absorption spectrum, and infrared optical transmission spectra were carried out. The allowed indirect transition optical band gap was calculated according to the classical Tauc equation. The results show that with the addition of ZnI2, the glass-forming ability and thermal stability are improved gradually. With the contents of ZnI2 increased from 5 to 20 at.%, continued blue-shifting occurs in the cutting-off absorption edge of short-wavelength and the values of indirect optical band gaps were observed with ranges from 0.596 to 0.626 eV in these glasses. These GeTe4.3-GaTe3-ZnI2 glasses show wide optical transmission and the infrared cut-off wavelengths are larger than 25 μm, which implies that the Ge-Ga-Te-ZnI2 chalcogenide glasses possess the potential of far-IR optical window applications

The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material

The potentials of Sn, In, or Al doped ZnSb thin film as candidates for phase change materials have been studied in this paper. It was found that the Zn-Sb bonds were broken by the addition of the dopants and homopolar Zn-Zn bonds and other heteropolar bonds, such as Sn-Sb, In-Sb, and Al-Sb, were subsequently formed. The existence of homopolar Sn-Sn and In-In bonds in Zn₅₀Sb₃₆Sn₁₄ and Zn₄₁Sb₃₆In₂₃ films, but no any Al-Al bonds in Zn₃₅Sb₃₀Al₃₅ film, was confirmed. All these three amorphous films crystallize with the appearance of crystalline rhombohedral Sb phase, and Zn₃₅Sb₃₅Al₃₅ film even exhibits a second crystallization process where the crystalline AlSb phase is separated out. The Zn₃₅Sb₃₀Al₃₅ film exhibits a reversible phase change behavior with a larger Ea ( 4.7 eV), higher Tc (~ 245ᴼ C), better 10-yr data retention (~ 182ᴼ C), less incubation time (20 ns at 70 mW), and faster complete crystallization speed (45 ns at 70 mW). Moreover, Zn₃₅Sb₃₀Al₃₅ film shows the smaller root-mean-square (1.654 nm) and less change of the thickness between amorphous and crystalline state (7.5%), which are in favor of improving the reliability of phase change memory.This work was financially supported by the Natural Science Foundation of China (Grant Nos. 61306147, 61377061), the Public Project of Zhejiang Province (Grant No.2014C31146), the Young Leaders of academic climbing project of the Education Department of Zhejiang Province (pd2013092), the Natural Science Foundation of Zhejiang Province (Grant No. LQ15F040002), the Scientific Research Foundation of Graduate School of Ningbo University, and sponsored by K. C. Wong Magna Fund in Ningbo University

Preparation of Low-loss Ge15Ga10Te75 chalcogenide glass for far-IR optics applications

International audienceGe15Ga10Te75 (GGT) glass shows good transparency between 2 and 25 μm wavelengths, good chemical and thermal stability to be drawn into fiber, which appears to be a good candidate for developing far-IR fiber-optics devices, although there are strong absorption peaks caused by impurities in the glass. With the aim of decreasing the content of impurities and micro-crystal particles in prepared \GGT\ glass samples, a rapid heating furnace and the fast distillation method based on vapor evaporation plus deposition under vacuum condition was adopted. Properties measurements including Differential Scanning Calorimeter (DSC), Vis-NIR and \IR\ transmitting spectra were performed on the prepared glass samples. Dependence of optical loss on the types of oxygenic getters and their contents and glass quenching temperature was also studied. All these results show that the average optical losses of distilled glass samples were greatly improved by the designated purification processes. Besides, the quality of the glass samples can be improved with the optimized quenching temperature. In all, the optical loss of the glass can be reduced effectively. Minimum optical losses of 0.042 dB/mm at 9 μm and 0.037 dB/mm at 12 μm are obtained after a right purification process, which are the lowest loss of the \GGT\ chalcogenide glass nowadays

Formation and properties of chalcogenide glasses based on GeS2-​Sb2S3-​AgI system

International audienceNovel glasses in GeS2-​Sb2S3-​AgI system have been prepd. by melt-​quenching method. A large glass-​forming region was found in this novel system, in which almost 60 mol​% AgI has been incorporated. The basic physiochem. properties of glass samples were investigated. With the addn. of AgI, red shift of short-​wavelength absorption edge and distinct drop of the glass transition temp. (Tg) were obsd. In addn., a high Ag+ ion cond. of 6.37×10-​4 S​/cm at room temp. was obtained in 55(0.6GeS2-​0.4Sb2S3)​-​45AgI sample, indicating that these glasses have potential application as amorphous solid electrolytes

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

This work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University

Freely adjusted properties in Ge–S based chalcogenide glasses with iodine incorporation

International audienceIn this study, we examined the function of halogen iodine acting as a glass network modifier in green chalcogenide glasses based on the Ge–S system. We obtained a series of Ge–S–I glasses and determined their glass-forming region. We then recorded the physical, thermal, and optical properties and studied the effect of halogen iodine on Ge–S–I glasses. Results show that these glasses have relatively wide optical transmission window for infrared (IR) applications. The softening temperature of Ge–S–I glasses varies from 210.54 °C to 321.63 °C, this temperature fits well with some kinds of high-temperature polymers, such as PES and PEI, the polymers serve as protective layers with high strength and flexibility, thus simplifying the fabrication processes of IR chalcogenide glass fiber. Finally, we performed a purification process to eliminate impurities and to improve optical spectr

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Zn-doped Sb₂Te films are proposed to present the feasibility for phase-change memory application. Zn atoms are found to significantly increase crystallization temperature of Zn x (Sb₂Te)1−x films and be almost linearly with the wide range of Zn-doping concentration from x = 0 to 29.67 at.%. Crystalline resistances are enhanced by Zn-doping, while keeping the large amorphous/crystalline resistance ratio almost constant at ∼10⁵. Especially, the Zn 26.07 (Sb₂Te)73.93 and Zn 29.67 (Sb₂Te)70.33 films exhibit a larger resistance change, faster crystallization speed, and better thermal stability due to the formation of amorphous Zn-Sb and Zn-Te phases as well as uniform distribution of Sb₂Te crystalline grains

Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

The superior performance of Zn-doped Sb₇Te₃ films might be favorable for the application in phase change memory. It was found that Zn dopants were able to suppress phase separation and form single stable Sb2Te crystal grain, diminish the grain size, and enhance the amorphous thermal stability of Sb₇Te₃ film. Especially, Zn 30.19(Sb₇Te₃)69.81 film has higher crystallization temperature (∼258 °C), larger crystallization activation energy (∼4.15 eV), better data retention (∼170.6 °C for 10 yr), wider band gap (∼0.73 eV), and higher crystalline resistance. The minimum times for crystallization of Zn 30.19(Sb₇Te₃)69.81 were revealed to be as short as ∼10 ns at a given proper laser power of 70 mW.This work was financially supported by the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the CAS Special Grant for Postgraduate Research, Innovation and Practice, the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University